Characterization of N-doped DLC thin films prepared by hydrocarbons pyrolysis method

被引:14
作者
Murata, Yuma [1 ]
Choo, Cheow-Keong [2 ]
Ono, Hiroshi [1 ]
Nagai, Yutaka [1 ]
Tanaka, Katsumi [1 ]
机构
[1] Univ Electrocommun, Grad Sch Informat & Engn, 1-5-1 Chofugaoka, Chofu, Tokyo 1828585, Japan
[2] Univ Electrocommun, Ctr Int Programs & Exchange, 1-5-1 Chofugaoka, Chofu, Tokyo 1828585, Japan
关键词
Nitrogen-doped DLC; amorphous carbon nitride; hydrocarbons pyrolysis; Raman spectroscopy; X-ray photoelectron spectroscopy; AMORPHOUS-CARBON NITRIDE; DIAMOND-LIKE CARBON; RAY PHOTOELECTRON-SPECTROSCOPY; ELECTRONIC-STRUCTURE; BONDING STRUCTURE; A-CNXH; NITROGEN; SPECTRUM; HARD;
D O I
10.1016/j.matpr.2016.02.033
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Nitrogen-doped DLC thin films prepared by a hydrocarbons pyrolysis method were characterized with Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), UV-Vis spectroscopy and a four-terminal current-voltage measuring method in terms of their structural, bonding, optical and electrical properties. Raman spectra showed that doping N atoms in the DLC films caused the full width at half maximum (FWHM) values of G-peak to be broader, the G-peak positions to shift downward and the I-D/I-G ratio to be lower than non-doped DLC films. These indicate that N-doping to DLC induces the reduction of the sp(2) based nanocluster size. The chemical bonding state of the N-doped DLC films was homogeneous in bulk, which was evaluated with XPS by Ar sputtering of the DLC films. The XPS spectra of C1s and N1s showed that the hybridized C ratio (sp(3)C/sp(2)C) of the deconvoluted C1s spectra increased due to the formation of the N bonded to sp(3)C (N-sp(3)C). In addition, the optical band gap and the resistance increased by doping N atoms in the DLC films. Our experimental results show that N-doping leads to an increase of the sp(3)C/sp(2)C and the resistance as well as the optical band gap of the DLC films prepared with the hydrocarbons pyrolysis method. (C) 2016 The Authors. Published by Elsevier Ltd.
引用
收藏
页码:S197 / S202
页数:6
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