共 36 条
Enhancing Bandwidth and Back-Off Range of Doherty Power Amplifier With Modified Load Modulation Network
被引:48
作者:
Xu, Yang
[1
]
Pang, Jingzhou
[1
,2
]
Wang, Xiaoyu
[1
]
Zhu, Anding
[1
]
机构:
[1] Univ Coll Dublin, Sch Elect & Elect Engn, Dublin D04 V1W8 4, Ireland
[2] Chongqing Univ, Sch Microelect & Commun Engn, Chongqing 400044, Peoples R China
基金:
爱尔兰科学基金会;
关键词:
Bandwidth;
Impedance;
Broadband communication;
Peak to average power ratio;
Optimized production technology;
Gallium nitride;
Wireless communication;
Broadband;
Doherty amplifier;
5G;
gallium nitride (GaN);
load modulation;
power amplifier (PA);
D O I:
10.1109/TMTT.2021.3056402
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
This article presents a novel methodology for designing a broadband Doherty power amplifier (DPA) with extended output power back-off (OBO) range. A modified load modulation network (LMN) is proposed to enhance the OBO range and the bandwidth of the DPA simultaneously. Analysis is conducted to explore the relationship between the proposed LMN parameters and the broadband performance under various OBO levels. Generalized design formulas of the LMN parameters are then introduced to offer the broadband solution for arbitrary current ratios and OBO levels. An asymmetric DPA is demonstrated and implemented with gallium nitride (GaN) transistors using the proposed approach. The fabricated DPA operates from 1.4 to 2.5 GHz with 9-dB OBO range. The measured drain efficiency reaches 61%-75.5% at saturation and 44.6%-54.6% at 9-dB OBO within the operating bandwidth. When driven by a 60-MHz modulated signal with 9-dB peak-to-average power ratio (PAPR), the fabricated DPA attains 47.4%-53.5% average drain efficiency and better than -45.5-dBc adjacent channel leakage ratio (ACLR) after digital predistortion.
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页码:2291 / 2303
页数:13
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