Temperature dependent transport properties in molybdenum oxide doped α-NPD

被引：25

作者：

Suman, C. K. ^{[1
]}

Yang, Jungjin ^{[1
]}

Lee, Changhee ^{[1
]}

机构：

[1] Seoul Natl Univ, Interuniv Semicond Res Ctr, Sch Elect Engn & Comp Sci, Seoul 151744, South Korea

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2010年 / 166卷 / 02期

关键词：

Doping; Space charge limited (SCL); Activation energy; Traps; CONDUCTIVITY; IODINE;

D O I：

10.1016/j.mseb.2009.10.030

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The temperature dependent transport properties of molybdenum oxide (MoO3) doped N,N'-di(1-naphthyl)-N,N'-diphenylbenzidin (alpha-NPD) were studied over a frequency range of 100 Hz to 1 MHz. The value of trap density and mobility calculated by detailed analysis of current-voltage (I-V) characteristics are 9.43 x 10(26) m(-3) and 1.23 x 10(-6) cm(2) V-1 s(-1), respectively. The relaxation time for the carriers in the bulk and in the interface region decreases with temperature. The Cole-Cole plot indicates the device can be modeled as the combination of two parallel resistor-capacitor (R-C) circuits with a series resistance of around 70 Omega. The dc conductivity shows two different regions in the studied temperature range with activation energy of E-a similar to 0.107 eV (region 1) and E-a similar to 52 meV (region II), respectively. The ac conductivity follows the universal power law and the onset frequency increases with increase of temperature. The temperature dependent conduction mechanism can be explained by correlated hopping barrier (CBH) model. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：147 / 151

页数：5

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