Charge Carrier Distribution in Low-Voltage Dual-Gate Organic Thin-Film Transistors

被引：10

作者：

Shiwaku, Rei ^{[1
]}

Tamura, Masataka ^{[1
]}

Matsui, Hiroyuki ^{[1
]}

Takeda, Yasunori ^{[1
]}

Murase, Tomohide ^{[2
]}

Tokito, Shizuo ^{[1
]}

机构：

[1] Yamagata Univ, Res Ctr Organ Elect ROEL, 4-3-16 Jonan, Yonezawa, Yamagata 9928510, Japan

[2] Mitsubishi Chem Corp, Yokohama R&D Ctr, Aoba Ku, 1000 Kamoshida Cho, Yokohama, Kanagawa 2278502, Japan

来源：

APPLIED SCIENCES-BASEL | 2018年 / 8卷 / 08期

关键词：

organic transistor; dual-gate; carrier distribution; simulation; FIELD-EFFECT TRANSISTORS; FLEXIBLE PLASTIC FOIL; CONTACT RESISTANCE; TECHNOLOGY; MOBILITY; EXTRACTION; CIRCUITS;

D O I：

10.3390/app8081341

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Dual-gate organic thin-film transistors (DGOTFTs), which exhibit better electrical properties, in terms of on-current and subthreshold slope than those of single-gate organic thin-film transistors (OTFTs) are promising devices for high-performance and robust organic electronics. Electrical behaviors of high-voltage (>10 V) DGOTFTs have been studied: however, the performance analysis in low-voltage DGOTFTs has not been reported because fabrication of low-voltage DGOTFTs is generally challenging. In this study, we successfully fabricated low-voltage (<5 V) DGOTFTs by employing thin parylene film as gate dielectrics and visualized the charge carrier distributions in low-voltage DGOTFTs by a simulation that is based on finite element method (FEM). The simulation results indicated that the dual-gate system produces a dual-channel and has excellent control of charge carrier density in the organic semiconducting layer, which leads to the better switching characteristics than the single-gate devices.

引用

页数：9

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