Abnormal photoluminescence behavior of self-assembled InAs quantum dots with bimodal size distribution

被引：0

作者：

Lee, CM ^{[1
]}

Choi, SH

Seo, JC

Lee, JI

Leem, JY

Han, IK

机构：

[1] Kyung Hee Univ, Inst Nat Sci, Suwon 449701, South Korea

[2] Korea Res Inst Stand & Sci, Nanosurface Grp, Taejon 305340, South Korea

[3] Inje Univ, Dept Opt Engn, Kimhae 621749, South Korea

[4] Korea Inst Sci & Technol, Nano Devices Res Ctr, Seoul 130650, South Korea

来源：

JOURNAL OF THE KOREAN PHYSICAL SOCIETY | 2004年 / 45卷 / 06期

关键词：

InAs; quantum dots; bimodal; photoluminesence;

D O I：

暂无

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report on the abnormal behaviors of the optical properties for self-assembled InAs/GaAs quantum dots (QDs) by using excitation-intensity-dependent and temperature-dependent photoluminescence (PL) spectroscopy, The excitation intensity- and temperature-dependent PL of InAs QDs indicate that the double-peak feature is due to ground-state transitions of QDs with branches of two different sizes, From the variations in the PL peak position and linewidth with temperature, thermally activated carriers transfer from the small QDs to large ones, and that carrier transfer between QDs can be facilitated by using a wetting layer.

引用

页码：1615 / 1618

页数：4

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