Magnetoresistance of the two-dimensional electron gas in GaN quantum wells in a parallel magnetic field

被引：1
|
作者：
Gold, A
Dolgopolov, VT
机构：
[1] Ctr Elaborat Mat & Etud Struct, F-31055 Toulouse, France
[2] Russian Acad Sci, Inst Solid State Phys, Chernogolovka 142432, Moscow District, Russia
来源：
JOURNAL OF SUPERCONDUCTIVITY | 2003年 / 16卷 / 02期
关键词：
magnetoresistance; spin-polarization; GaN quantum wells;
D O I：
10.1023/A:1023657201872
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We present results for the resistivity of the two-dimensional spin-polarized electron gas as realized in GaN quantum wells at zero temperatures. A parallel magnetic field is used to create a spin-polarized electron gas. We discuss the density dependence of the magnetoresistance for impurity scattering and interface-roughness scattering. Finite width effects of the electron gas on the magnetoresistance are described.
引用
收藏
页码：307 / 308
页数：2
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