Pulsed radio frequency characterisation on 28 nm complementary metal-oxide semiconductor technology

被引：0

作者：

Sahoo, A. K. ^{[1
]}

Fregonese, S. ^{[1
]}

Scheer, P. ^{[2
]}

Celi, D. ^{[2
]}

Juge, A. ^{[2
]}

Zimmer, T. ^{[1
]}

机构：

[1] Univ Bordeaux, CNRS, UMR 5218, Lab IMS, Bordeaux, France

[2] STMicroelectronics, Paris, France

来源：

ELECTRONICS LETTERS | 2015年 / 51卷 / 01期

关键词：

ACTIVE INDUCTOR;

D O I：

10.1049/el.2014.3634

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The influence of electrothermal behaviour on radio frequency (RF) performances of 28 nm bulk complementary metal-oxide semiconductor technology is examined. Biased continuous-wave RF and pulsed RF (applying different DC pulse and RF pulse width combinations) characterisations are performed within the 1-30 GHz frequency domain at room temperature and the transit frequency (fT) is extracted at 15 GHz frequency. It has been found that the degradation in fT on I/O devices is about 3 GHz because of the self-heating effect.

引用

页码：71 / U8978

页数：2

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