Light-induced and holographic properties of ruthenium and manganese co-doped Bi4Ge3O12 crystals

被引:0
|
作者
Lin, S. H. [1 ]
Marinova, V. [2 ]
Lin, Y. C. [1 ]
Petrova, D. [3 ,4 ]
Chou, W. C. [1 ]
Hsu, K. Y. [5 ,6 ]
机构
[1] Natl Chiao Tung Univ, Dept Electrophys, Hsinchu 30010, Taiwan
[2] Bulgarian Acad Sci, Cent Lab Opt Storage & Proc Informat, BU-1113 Sofia, Bulgaria
[3] Inst Solid State Phys, BU-1784 Sofia, Bulgaria
[4] South West Univ, Dept Phys, Blagoevgrad 2700, Bulgaria
[5] Natl Chiao Tung Univ, Dept Photon, Hsinchu 30010, Taiwan
[6] Natl Chiao Tung Univ, Inst Electroopt Engn, Hsinchu 30010, Taiwan
关键词
optical properties; photochromic effect; photoluminescence; dark conductivity; holography; ELECTRON-PARAMAGNETIC-RESONANCE; LUMINESCENCE; IMPURITIES; BEHAVIOR;
D O I
10.1088/2040-8978/12/7/075601
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The effect of Ru + Mn co-doping on the light-induced properties of Bi4Ge3O12 (BGO) crystals is studied and compared with single Ru- and Mn-doped crystals. Optical absorption spectra of Ru + Mn co-doped crystal demonstrates a photosensitivity shift to the visible spectral range. In addition, a strong photochromic effect, being fully reversible by thermal annealing is observed. It is verified by photoluminescence emission that charge traps could be manipulated under ultraviolet (UV) excitation, as the photoluminescence intensity decreases revealing the existence of the state filling effect. Ru + Mn doping leads to a faster response time during holographic recording at 633 nm and a prolonged read-out process, especially after a preliminary exposure to UV light. The ability to modify the defect structure and corresponding absorption bands suggests the future potential for optical fixing using a two-step sensitization method.
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页数:7
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