A pad roughness model for the analysis of lubrication in the chemical mechanical polishing of a silicon wafer

被引:7
作者
Guo, Dongming [1 ]
Liu, Jingyuan [1 ]
Kang, Renke [1 ]
Jin, Zhuji [1 ]
机构
[1] Dalian Univ Technol, Minist Educ, Key Lab Precis & Nontradit Machining Technol, Dalian 116023, Peoples R China
关键词
D O I
10.1088/0268-1242/22/7/020
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The slurry flow beneath the wafer in chemical mechanical polishing (CMP), involving the chemical reaction and the lubrication, is critical to the planarity and surface quality of a large-sized silicon wafer. In order to analyse the effects of pad roughness and some important operating parameters on the slurry flow with the suspended abrasives between the wafer and the pad, a complicated three-dimensional model based on the micropolar fluid theory, Brinkman equations and Darcy's law is developed. The effects of pad roughness and vital parameters on the slurry flow between the pad and the wafer are well discussed.
引用
收藏
页码:793 / 797
页数:5
相关论文
共 15 条
[1]   In situ technique for dynamic fluid film pressure measurement during chemical mechanical polishing [J].
Bullen, D ;
Scarfo, A ;
Koch, A ;
Bramono, DPY ;
Coppeta, J ;
Racz, L .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (07) :2741-2743
[2]   Hydrodynamic characteristics of the thin fluid film in chemical-mechanical polishing [J].
Chen, JM ;
Fang, YC .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2002, 15 (01) :39-44
[3]   Visualized characterization of slurry film between wafer and pad during chemical mechanical planarization [J].
Hocheng, H ;
Cheng, CY .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2002, 15 (01) :45-50
[4]   A suspending abrasives and porous pad model for the analysis of lubrication in chemical mechanical polishing [J].
Liu, J. Y. ;
Guo, D. M. ;
Jin, Z. J. ;
Kang, R. X. .
ADVANCES IN MACHINING & MANUFACTURING TECHNOLOGY VIII, 2006, 315-316 :775-778
[5]   Effects of suspending abrasives on the lubrication properties of slurry in chemical mechanical polishing of silicon wafer [J].
Liu, JY ;
Jin, ZJ ;
Guo, DM ;
Kang, RK .
ADVANCES IN GRINDING AND ABRASIVE TECHNOLOGY XIII, 2006, 304-305 :359-363
[6]   Material removal mechanism in chemical mechanical polishing: Theory and modeling [J].
Luo, JF ;
Dornfeld, DA .
IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 2001, 14 (02) :112-133
[7]   Polishing pad surface characterisation in chemical mechanical planarisation [J].
McGrath, J ;
Davis, C .
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2004, 153 :666-673
[8]   The effect of slurry viscosity on chemical-mechanical polishing of silicon wafers [J].
Mullany, B ;
Byrne, G .
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2003, 132 (1-3) :28-34
[9]   Hydrodynamic analysis of chemical mechanical polishing process [J].
Park, SS ;
Cho, CH ;
Ahn, Y .
TRIBOLOGY INTERNATIONAL, 2000, 33 (10) :723-730
[10]   Analysis of flow between a wafer and pad during CMP precesses [J].
Rogers, C ;
Coppeta, J ;
Racz, L ;
Philipossian, A ;
Kaufman, FB ;
Bramono, D .
JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (10) :1082-1087