Fabrication and characterization of anatase TiO2 thin film on glass substrate grown by pulsed laser deposition

被引:42
作者
Choi, Y
Yamamoto, S
Umebayashi, T
Yoshikawa, A
机构
[1] Japan Atom Energy Res Inst, Dept Mat Dev, Takasaki, Gumma 3701292, Japan
[2] Univ Tokyo, Grad Sch Engn, Dept Quantum Engn & Syst Sci, Tokyo 1138656, Japan
关键词
titanium dioxide; thin film; titanium carbide; pulsed laser deposition;
D O I
10.1016/j.ssi.2004.03.014
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Titanium dioxide (TiO2) films were prepared on glass substrates by pulsed laser deposition using a titanium carbide (TiC) target. The effects of substrate temperature on the crystal structures, surface morphologies and chemical states of the thin films were examined by the Xray diffraction (XRD), atomic force microscopy (AFM) and X-ray photoelectron spectroscopy (XPS), respectively. The results of XRD and XPS indicated that TiC film was grown at substrate temperature of 293 K, whereas the anatase TiO2 film was formed at that of 773 K, which had round grains with 11-28 nm, and surface roughness was 0.5-1.1 nm. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:105 / 108
页数:4
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