Single-Mode 850-nm VCSELs for 54-Gb/s ON-OFF Keying Transmission Over 1-km Multi-Mode Fiber

被引:33
作者
Chi, Kai-Lun [1 ]
Shi, Yi-Xuan [1 ]
Chen, Xin-Nan [1 ]
Chen, Jason [2 ]
Yang, Ying-Jay [3 ]
Kropp, J. -R. [4 ]
Ledentsov, N., Jr. [4 ]
Agustin, M. [4 ]
Ledentsov, N. N. [4 ]
Stepniak, G. [5 ]
Turkiewicz, J. P. [5 ]
Shi, Jin-Wei [1 ]
机构
[1] Natl Cent Univ, Dept Elect Engn, Taoyuan 320, Taiwan
[2] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan
[3] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan
[4] VI Syst GmbH, D-10623 Berlin, Germany
[5] Warsaw Univ Technol, Inst Telecommun, PL-00661 Warsaw, Poland
关键词
Semiconductor lasers; vertical cavity surface emitting lasers; SURFACE-EMITTING LASERS; HIGH-SPEED; NM VCSEL;
D O I
10.1109/LPT.2016.2542099
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
By combing Zn-diffusion and oxide-relief apertures with strong detuning (>20 nm) in our demonstrated short-cavity (lambda/2) 850-nm vertical-cavity surface-emitting lasers (VCSELs), wide electrical-to-optical bandwidth (29-24 GHz), low-differential resistance (similar to 100 Omega), and (quasi) single-mode (SM) with reasonable output power (similar to 1.4 mW) performances can be simultaneously achieved. Error-free ON-OFF keying transmission at 54-Gb/s data rate through 1-km OM4 multi-mode fiber can be achieved by using highly SM device with forward error correction and decision feedback equalization techniques. As compared with the reference device with a larger oxide-relief aperture and a multi-mode performance, the SM device exhibits lower bit-error rate (1x10(-5) versus 1x10(-2)) at 54 Gb/s. This result indicates that modal dispersion plays more important role in transmission than that of output power does. We benchmark these results to an industrial 50-Gb/s SM VCSEL. It shows a higher bit-error-rate value similar to 3.5x10(-3) versus similar to 1.4x10(-4) under the same received optical power.
引用
收藏
页码:1367 / 1370
页数:4
相关论文
共 15 条
[11]   Gbit/s data transmission over 2 km multimode fibre using 850 nm mode filter VCSEL [J].
Safaisini, R. ;
Haglund, E. ;
Westbergh, P. ;
Gustavsson, J. S. ;
Larsson, A. .
ELECTRONICS LETTERS, 2014, 50 (01) :40-41
[12]   Single-Mode, High-Speed, and High-Power Vertical-Cavity Surface-Emitting Lasers at 850 nm for Short to Medium Reach (2 km) Optical Interconnects [J].
Shi, Jin-Wei ;
Wei, Zhi-Rui ;
Chi, Kai-Lun ;
Jiang, Jia-Wei ;
Wun, Jhih-Min ;
Lu, I-Cheng ;
Chen, Jason ;
Yang, Ying-Jay .
JOURNAL OF LIGHTWAVE TECHNOLOGY, 2013, 31 (24) :4037-4044
[13]   Oxide-Relief and Zn-Diffusion 850-nm Vertical-Cavity Surface-Emitting Lasers With Extremely Low Energy-to-Data-Rate Ratios for 40 Gbit/s Operations [J].
Shi, Jin-Wei ;
Yan, Jhih-Cheng ;
Wun, Jhih-Min ;
Chen, Jason ;
Yang, Ying-Jay .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2013, 19 (02)
[14]   The Influence of Zn-Diffusion Depth on the Static and Dynamic Behavior of Zn-Diffusion High-Speed Vertical-Cavity Surface-Emitting Lasers at an 850 nm Wavelength [J].
Shi, Jin-Wei ;
Chen, C. -C. ;
Wu, Y. -S. ;
Guol, Shi Hao ;
Yang, Ying-Jay .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2009, 45 (07) :800-806
[15]   4-PAM for High-Speed Short-Range Optical Communications [J].
Szczerba, Krzysztof ;
Westbergh, Petter ;
Karout, Johnny ;
Gustavsson, Johan S. ;
Haglund, Asa ;
Karlsson, Magnus ;
Andrekson, Peter A. ;
Agrell, Erik ;
Larsson, Anders .
JOURNAL OF OPTICAL COMMUNICATIONS AND NETWORKING, 2012, 4 (11) :885-894