Fully Integrated Actively Quenched SPAD in 0.18μm CMOS Technology

被引：0

作者：

Schneider-Hornstein, Kerstin ^{[1
]}

Hofbauer, Michael ^{[1
]}

Steindl, Bernhard ^{[1
]}

Zimmermann, Horst ^{[1
]}

机构：

[1] TU Wien, Inst Electrodynam Microwave & Circuit Engn, Vienna, Austria

来源：

2020 AUSTROCHIP WORKSHOP ON MICROELECTRONICS (AUSTROCHIP) | 2020年

基金：

奥地利科学基金会;

关键词：

SPAD; optical receiver; CMOS; active quenching;

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

A fully integrated single- photon avalanche diode (SPAD) in a 180 nm high voltage CMOS technology is presented. The introduced quenching circuit is realized by the 3.3V high voltage transistors of the process to increase the excess bias voltage V-ex above the usual 1.8V supply voltage of the 180nm CMOS technology. Furthermore the circuit is cascoded to increase the excess bias even more up to 6.6V.

引用

页码：62 / 65

页数：4

共 4 条

[1] TRAPPING PHENOMENA IN AVALANCHE PHOTODIODES ON NANOSECOND SCALE [J].

COVA, S ;

LACAITA, A ;

RIPAMONTI, G .

IEEE ELECTRON DEVICE LETTERS, 1991, 12 (12) :685-687

[2] Fast Cascoded Quenching Circuit for Decreasing Afterpulsing Effects in 0.35-mu m CMOS [J].

Enne, R. ;

Steindl, B. ;

Hofbauer, M. ;

Zimmermann, H. .

IEEE SOLID-STATE CIRCUITS LETTERS, 2018, 1 (03) :62-65

[3] Single-Photon Avalanche Photodiode Based Fiber Optic Receiver for Up to 200 Mb/s [J].

Steindl, Bernhard ;

Hofbauer, Michael ;

Schneider-Hornstein, Kerstin ;

Brandl, Paul ;

Zimmermann, Horst .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2018, 24 (02)

[4]

Sze S. M., 2006, Semiconductor Devices: Physics and Technology

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