Strain-induced lateral self-organization in Si/SiO2 nanostructures

被引：4

作者：

Tsybeskov, L. ^{[1
]}

Kamenev, B. V. ^{[1
]}

Sirenko, A. A. ^{[2
]}

McCaffrey, J. P. ^{[3
]}

Lockwood, D. J. ^{[3
]}

机构：

[1] New Jersey Inst Technol, Dept Elect & Comp Engn, Newark, NJ 07102 USA

[2] New Jersey Inst Technol, Dept Phys, Newark, NJ 07102 USA

[3] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 01期

关键词：

amorphous semiconductors; crystallisation; elasticity; elemental semiconductors; grain boundaries; internal stresses; multilayers; nanofabrication; nanostructured materials; semiconductor thin films; silicon; silicon compounds; thermal expansion; NANOCRYSTALLINE-SILICON; HETEROSTRUCTURES; TECHNOLOGY; INTERFACE;

D O I：

10.1063/1.3290250

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We show that strain, arising from the mismatch between Si and SiO2 thermal expansion coefficients, directs the thermal crystallization of amorphous Si along Si/SiO2 interfaces, and produces continuous, fully crystallized nanometer thick Si layers with a lateral-to-vertical aspect ratio close to 100:1. These Si nanolayers exhibit a low density of structural defects and are found to be elastically strained with respect to the crystal Si substrate.

引用

页数：3

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