Dopamine D1 receptors regulate protein synthesis-dependent long-term recognition memory via extracellular signal-regulated kinase 1/2 in the prefrontal cortex

被引:165
作者
Nagai, Taku
Takuma, Kazuhiro
Kamei, Hiroyuki
Ito, Yukio
Nakamichi, Noritaka
Ibi, Daisuke
Nakanishi, Yutaka
Murai, Masaaki
Mizoguchi, Hiroyuki
Nabeshima, Toshitaka
Yamada, Kiyofumi [1 ]
机构
[1] Kanazawa Univ, Grad Sch Nat Sci & Technol, Div Life Sci, Lab Neuropsychopharmacol, Kanazawa, Ishikawa 9201192, Japan
[2] Nagoya Univ, Grad Sch Med, Dept Neuropsychopharmacol, Nagoya, Aichi 4668560, Japan
[3] Nagoya Univ, Grad Sch Med, Hosp Pharm, Nagoya, Aichi 4668560, Japan
关键词
D O I
10.1101/lm.461407
中图分类号
Q189 [神经科学];
学科分类号
071006 ;
摘要
Several lines of evidence suggest that extracellular signal-regulated kinase1/2 (ERK1/2) and dopaminergic system is involved in learning and memory. However, it remains to be determined if the dopaminergic system and ERK1/2 pathway contribute to cognitive function in the prefrontal cortex (PFC). The amount of phosphorylated ERK1/2 was increased in the PFC immediately after exposure to novel objects in the training session of the novel object recognition test. An inhibitor of ERK kinase impaired long-term recognition memory 24 h after the training although short-term memory tested 1 h after the training was not affected by the treatment. The dopamine D1 receptor agonist increased ERK1/2 phosphorylation in the PFC in vivo as well as in cortical neurons in vitro. Microinjection of the dopamine D1 receptor antagonist into the PFC impaired long-term recognition memory whereas the D2 receptor antagonist had no effect. Immunohistochemistry revealed that exposure to novel objects resulted in an increase in c-Fos expression in the PFC. Microinjection of the protein synthesis inhibitor anisomycin into the PFC impaired the long-term recognition memory. These results suggest that the activation of ERK1/2 following the stimulation of dopamine D1 receptors is necessary for the protein synthesis-dependent long-term retention of recognition memory in the PFC.
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页码:117 / 125
页数:9
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