Optical characterization of VLS+CVD grown 3C-SiC films by non-linear and photoluminescence techniques

被引：6

作者：

Manolis, G. ^{[1
]}

Zoulis, G. ^{[2
]}

Juillaguet, S. ^{[2
]}

Lorenzzi, J. ^{[3
]}

Ferro, G. ^{[3
]}

Camassel, J. ^{[2
]}

Jarasiunas, K. ^{[1
]}

机构：

[1] Vilnius State Univ, Inst Appl Res, Dept Semicond Optoelect, LT-10222 Vilnius, Lithuania

[2] Univ Montpellier 2, CNRS, Etud Semicond Grp, F-34095 Montpellier, France

[3] UCB Lyon 1, CNRS, UMR 5615, Lab Multimat Interfaces, F-69622 Villeurbanne, France

来源：

SILICON CARBIDE AND RELATED MATERIALS 2009, PTS 1 AND 2 | 2010年 / 645-648卷

关键词：

3C-SiC; carrier lifetime; diffusion coefficient; bipolar mobility; photoluminescence; VLS;

D O I：

10.4028/www.scientific.net/MSF.645-648.443

中图分类号：

TB33 [复合材料];

学科分类号：

摘要：

Thin 3C-SiC(111) epilayers grown on 6H-SiC(0001) substrate by VLS and CVD procedures were studied by low temperature photoluminescence (LTPL) and nonlinear optical techniques at room and low temperatures. Free carrier density ((0.3-7)x10(17) cm(-3)) and nitrogen (4x10(16) cm(-3)) concentration in the layers were determined from Raman and LTPL data. Investigation of non-equilibrium carrier dynamics by using transient grating and free carrier absorption techniques provided an ambipolar diffusion coefficient D-a (similar to 2.5 cm(2)/s) and carrier lifetime tau(R) (2-4 ns) values at room temperature. The temperature dependences of D-a and tau(R) in 40-300 K range revealed the scattering processes in high density plasma as well the impact of defects.

引用

页码：443 / +

页数：2

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