Dielectronic recombination in O4+ near the ionization threshold

被引：1

作者：

Pindzola, M. S. ^{[1
]}

Fogle, M. R. ^{[1
]}

Loch, S. D. ^{[1
]}

机构：

[1] Auburn Univ, Dept Phys, Auburn, AL 36849 USA

来源：

JOURNAL OF PHYSICS B-ATOMIC MOLECULAR AND OPTICAL PHYSICS | 2021年 / 54卷 / 11期

基金：

美国国家航空航天局;

关键词：

dielectronic; recombination; ionization;

D O I：

10.1088/1361-6455/abc7fe

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Relativistic perturbation theory calculations are carried out for dielectronic recombination cross sections involving jj J levels near the ionization threshold. We included levels in the 1s (2)2p (2)3l, 1s (2)2s2p3l, 1s (2)2s2p4l, 1s (2)2s2p5l, and 1s (2)2s2p6l configurations of O3+ that lie within +/- 5.0 eV of the O4+ ionization threshold. Theoretical dielectronic recombination cross sections are compared with experimental dielectronic recombination rate coefficients from 0.0 eV to 5.0 eV above threshold.

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