Total Dose Effects in Tunnel-Diode Body-Contact SOI nMOSFETs

被引：9

作者：

Luo, Jiexin ^{[1
]}

Chen, Jing ^{[1
]}

Chai, Zhan ^{[1
]}

Lu, Kai ^{[1
,2
]}

He, Weiwei ^{[1
,2
]}

Yang, Yan ^{[1
,3
]}

Zhang, En Xia ^{[4
]}

Fleetwood, Daniel M. ^{[4
]}

Wang, Xi ^{[1
]}

机构：

[1] Chinese Acad Sci, State Key Lab Funct Mat Informat, Shanghai Inst Microsyst & Informat Technol, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Univ, Beijing 100049, Peoples R China

[3] Soochow Univ, Dept Phys, Key Lab Thin Films Jiangsu, Suzhou 215006, Peoples R China

[4] Vanderbilt Univ, Dept Elect Engn & Comp Sci, Nashville, TN 37235 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2014年 / 61卷 / 06期

关键词：

Body contact; partially depleted SOI; total dose effect; Tunnel-Diode Body-Contact (TDBC); OXIDES; TECHNOLOGIES; TRANSISTORS;

D O I：

10.1109/TNS.2014.2364923

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Tunnel-Diode Body-Contact (TDBC) SOI MOSFETs utilize a shallow source and a deep drain to eliminate total-ionizing-dose induced back-channel leakage and to suppress floating body effects. In contrast, significant leakage current is observed in T-gate Body-Contact (TB) SOI MOSFETs, as a result of trapped charge in the buried oxide. A subthreshold hump is observed in TDBC SOI MOSFETs after irradiation. The charge trapped at the shallow trench isolation (STI) corner is the major reason for the post-irradiation hump in the current-voltage characteristics. Pocket implantation reduces the size of the subthreshold hump in short-channel TDBC devices.

引用

页码：3018 / 3022

页数：5

共 15 条

[1] HOLE REMOVAL IN THIN-GATE MOSFETS BY TUNNELING [J].