Zn1-xCdxO film growth using remote plasma-enhanced metalorganic chemical vapor deposition

被引：82
作者：
Shigemori, S
Nakamura, A
Ishihara, J
Aoki, T
Temmyo, J
机构：
[1] Shizuoka Univ, Elect Res Inst, Hamamatsu, Shizuoka 4328011, Japan
[2] Shizuoka Univ, Grad Sch Elect Sci & Technol, Hamamatsu, Shizuoka 4328011, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 8B期
关键词：
ZnCdO; remote plasma-enhanced MOVCD photoluminescence; optical band gap;
D O I：
10.1143/JJAP.43.L1088
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Zn1-xCdxO films were successfully grown by remote plasma-enhanced metalorganic chemical vapor deposition (RPE-MOCVD). The content ratio of Zn1-xCdO films was controlled by changing the molar ratio of diethyl zinc (DEZn) to dimethyl cadmium (DMCd). The wurtzite structure of Zh(1-x)Cd(x)O films was obtained by increasing the Cd content up to x = 0.697. The optical-band-gap energy of Zn1-xCdxO films was tuned between 1.85 eV and 3.28 eV at room temperature. The photoluminescence emission of hexagonal Zn1-xCdxO films up to x = 0.697 was observed at room temperature.
引用
收藏
页码：L1088 / L1090
页数：3
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