Observation and tunability of room temperature photoluminescence of GaAs/GaInAs core-multiple-quantum-well shell nanowire structure grown on Si (100) by molecular beam epitaxy

被引：7

作者：

Park, Kwang Wook ^{[1
]}

Park, Chang Young ^{[1
]}

Ravindran, Sooraj ^{[1
]}

Jang, Ja-Soon ^{[2
]}

Jo, Yong-Ryun ^{[3
]}

Kim, Bong-Joong ^{[3
]}

Lee, Yong Tak ^{[1
,4
]}

机构：

[1] Gwangju Inst Sci & Technol, Sch Informat & Commun, Kwangju 500712, South Korea

[2] Yeungnam Univ, Sch Elect Engn & Comp Sci, Dept Elect, Gyongsan 712749, Gyeongsangbuk D, South Korea

[3] Gwangju Inst Sci & Technol, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[4] Gwangju Inst Sci & Technol, Adv Photon Res Inst, Kwangju 500712, South Korea

来源：

NANOSCALE RESEARCH LETTERS | 2014年 / 9卷

基金：

新加坡国家研究基金会;

关键词：

Core-shell nanowire; GaAs/GaInAs multiple-quantum-well; Molecular beam epitaxy; OPTICAL-PROPERTIES; SINGLE NANOWIRE; GAAS NANOWIRES; HETEROSTRUCTURES; SYSTEM;

D O I：

10.1186/1556-276X-9-626

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We report the observation of room temperature photoluminescence (PL) emission from GaAs/GaInAs core-multiple-quantum-well (MQW) shell nanowires (NWs) surrounded by AlGaAs grown by molecular beam epitaxy (MBE) using a self-catalyzed technique. PL spectra of the sample show two PL peaks, originating from the GaAs core NWs and the GaInAs MQW shells. The PL peak from the shell structure red-shifts with increasing well width, and the peak position can be tuned by adjusting the width of the MQW shell. The GaAs/GaInAs core-MQW shell NW surrounded by AlGaAs also shows an enhanced PL intensity due to the improved carrier confinement owing to the presence of an AlGaAs clad layer. The inclined growth of the GaAs NWs produces a core-MQW shell structure having a different PL peak position than that of planar QWs. The PL emission by MQW shell and the ability to tune the PL peak position by varying the shell width make such core-shell NWs highly attractive for realizing next generation ultrasmall light sources and other optoelectronics devices.

引用

页数：10

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