A CMOS-Compatible Carrier-Injection Plasmonic Micro-Ring Modulator (CIPMRM) with Stable Performance as Temperature Varying around 60 K

被引：0

作者：

Sun, Jiaqi ^{[1
,2
]}

Li, Zhihua ^{[1
]}

Wang, Wenwu ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Microelect, Beijing 100029, Peoples R China

[2] Univ Chinese Acad Sci, Sch Elect Elect & Commun Engn, Beijing 100049, Peoples R China

来源：

APPLIED SCIENCES-BASEL | 2022年 / 12卷 / 08期

基金：

国家重点研发计划;

关键词：

plasmonics; micro-ring modulator; CMOS; temperature stability; optoelectronic integration; MACH-ZEHNDER MODULATOR; OPTICAL MODULATOR; WAVE-GUIDE; SILICON;

D O I：

10.3390/app12083947

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A CMOS-compatible carrier-injection plasmonic micro-ring modulator (CIPMRM) is proposed and theoretically analyzed. It has a compacted footprint of 43.4 mu m(2) (R = 2 mu m), a data rate of 45 Gbps, an insertion loss of -8 dB, a static extinction ratio of 22 dB, and an energy consumption of 4.5 pJ/bit when 2.5 V peak-to-peak voltage is applied. Moreover, it works well when temperature varies around 60 K. A method of tuning the resonant wavelength based on the carrier concentration is proposed here because the device is reliable when the linewidth varies within +/- 5%. CIPMRM provides a way to overcome the shortcomings of temperature and process sensitivity, which are characteristics of the photonic micro-ring modulator. It can be used in optoelectronic integration for its small size and stable performance.

引用

页数：11

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