Highly Reliable Cu Interconnect Strategy for 10nm Node Logic Technology and Beyond

被引：0

作者：

Kim, R. -H. ^{[1
]}

Kim, B. H. ^{[1
]}

Matsuda, T. ^{[1
]}

Kim, J. N. ^{[1
]}

Baek, J. M. ^{[1
]}

Lee, J. J. ^{[1
]}

Cha, J. O. ^{[1
]}

Hwang, J. H. ^{[1
]}

Yoo, S. Y. ^{[1
]}

Chung, K. -M. ^{[1
]}

Park, K. H. ^{[1
]}

Choi, J. K. ^{[1
]}

Lee, E. B. ^{[1
]}

Nam, S. D. ^{[1
]}

Cho, Y. W. ^{[1
]}

Choi, H. J. ^{[1
]}

Kim, J. S. ^{[1
]}

Jung, S. Y. ^{[1
]}

Lee, D. H. ^{[1
]}

Kim, I. S. ^{[1
]}

Park, D. W. ^{[1
]}

Lee, H. B. ^{[1
]}

Ahn, S. H. ^{[1
]}

Park, S. H. ^{[1
]}

Kim, M. -C. ^{[1
]}

Yoon, B. U. ^{[1
]}

Paak, S. S. ^{[1
]}

Lee, N. -I. ^{[1
]}

Ku, J. -H. ^{[1
]}

Yoon, J. S. ^{[1
]}

Kang, H. -K. ^{[1
]}

Jung, E. S. ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, San 16, Hwasung City 445701, Gyeonggi Do, South Korea

来源：

2014 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2014年

关键词：

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

CVD-Ru represents a critically important class of materials for BEOL interconnects that provides Cu reflow capability. The results reported here include superior gap-fill performance, a solution for plausible integration issues, and robust EM / TDDB properties of CVD-Ru / Cu reflow scheme, by iterative optimization of process parameters, understanding of associated Cu void generation mechanism, and reliability failure analysis, thereby demonstrating SRAM operation at 10 nm node logic device and suggesting its use for future BEOL interconnect scheme.

引用

页数：4

共 4 条

[1]

Gstrein F., 2008, ADV MET C 2008 SAN D, P13

[2] Mechanism of Co Liner as Enhancement Layer for Cu Interconnect Gap-Fill [J].

He, M. ;

Zhang, X. ;

Nogami, T. ;

Lin, X. ;

Kelly, J. ;

Kim, H. ;

Spooner, T. ;

Edelstein, D. ;

Zhao, L. .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2013, 160 (12) :D3040-D3044

[3]

Matsuda T., 2013, IEDM, ps29

[4]

Yang CC, 2006, IEEE INT INTERC TECH, P187

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