Uniform Strain in Heterostructure Tunnel Field-Effect Transistors

被引：19

作者：

Verreck, Devin ^{[1
,2
]}

Verhulst, Anne S. ^{[1
]}

Van de Put, Maarten L. ^{[1
,3
]}

Soree, Bart ^{[1
,3
]}

Collaert, Nadine ^{[1
]}

Mocuta, Anda ^{[1
]}

Thean, Aaron ^{[1
]}

Groeseneken, Guido ^{[1
,2
]}

机构：

[1] IMEC, Kapeldreef 75, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, Dept Elect Engn, B-3001 Louvain, Belgium

[3] Univ Antwerp, Dept Phys, B-2020 Antwerp, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2016年 / 37卷 / 03期

关键词：

TFET; strain; heterostructure; PERFORMANCE;

D O I：

10.1109/LED.2016.2519681

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Strain can strongly impact the performance of III-V tunnel field-effect transistors (TFETs). However, previous studies on homostructure TFETs have found an increase in ON-current to be accompanied with a degradation of subthreshold swing. We perform 30-band quantum mechanical simulations of staggered heterostructure p-n-i-n TFETs submitted to uniaxial and biaxial uniform stress and find the origin of the subthreshold degradation to be a reduction of the density of states in the strained case. We apply an alternative configuration including a lowly doped pocket in the source, which allows to take full benefit of the strain-induced increase in ON-current.

引用

页码：337 / 340

页数：4

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