3-D Finite-Element Modeling of Multi-Finger High-Power Amplifiers With Compact Heat-Dissipation Packaging Structures

被引：0

作者：

Tseng, H. C. ^{[1
]}

Chen, J. Y. ^{[2
]}

机构：

[1] Kun Shan Univ, Nanotechnol Res & Dev Ctr, Yung Kang 710, Tainan County, Taiwan

[2] Kun Shan Univ, Dept Elect Engn, Tainan 710, Taiwan

来源：

IMPACT: 2009 4TH INTERNATIONAL MICROSYSTEMS, PACKAGING, ASSEMBLY AND CIRCUITS TECHNOLOGY CONFERENCE | 2009年

关键词：

HBTS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：12 / +

页数：2

共 5 条

[1] Application of GaInP/GaAs DHBT's to power amplifiers for wireless communications [J].

Chen, PF ;

Hsin, YMT ;

Welty, RJ ;

Asbeck, PM ;

Pierson, RL ;

Zampardi, PJ ;

Ho, WJ ;

Ho, MCV ;

Chang, MF .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1999, 47 (08) :1433-1438

[2]

Kim CW, 1996, IEICE T ELECTRON, VE79C, P617

[3] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[4] HIGH LINEARITY POWER X-BAND GAINP/GAAS HETEROJUNCTION BIPOLAR-TRANSISTOR [J].

LIU, W ;

KIM, T ;

IKALAINEN, P ;

KHATIBZADEH, A .

IEEE ELECTRON DEVICE LETTERS, 1994, 15 (06) :190-192

[5] Thermal performance of collector-up HBTs for small high-power amplifiers with a novel thermal via structure underneath the HBT fingers [J].

Osone, Y ;

Mochizuki, K ;

Tanaka, K .

IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES, 2005, 28 (01) :34-38

← 1 →