Influence of self-assembled monolayer binding group on graphene transistors

被引：12

作者：

Cernetic, Nathan ^{[1
]}

Hutchins, Daniel O. ^{[1
]}

Ma, Hong ^{[1
]}

Jen, Alex K. -Y. ^{[1
,2
]}

机构：

[1] Univ Washington, Dept Mat Sci & Engn, Seattle, WA 98195 USA

[2] Univ Washington, Dept Chem, Seattle, WA 98195 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 02期

基金：

美国国家科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; PERFORMANCE; SCATTERING;

D O I：

10.1063/1.4905595

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Graphene transistors on self-assembled monolayer (SAM) modified dielectric substrates were fabricated and characterized in order to determine the influence SAM binding group has on device properties. It was found that silane based alkyl SAMs had little to no influence in doping graphene transistors, while phosphonic acid based ones caused n-type doping of graphene transistors with a charge neutrality point shift of over 10 V. It was also discovered that alkyl SAM packing density influenced the doping magnitude. Due to substrate surface charge trap quenching, these SAMs independent of binding group enhanced charge mobility of graphene transistors compared to ones on bare oxide substrates. (C) 2015 AIP Publishing LLC.

引用

页数：4

共 26 条

[1] Dielectric Surface-Controlled Low-Voltage Organic Transistors via n-Alkyl Phosphonic Acid Self-Assembled Monolayers on High-k Metal Oxide [J].

Action, By Orb ;

Ting, Guy G. ;

Shamberger, Patrick J. ;

Ohuchi, Fumio S. ;

Ma, Hong ;

Jen, Alex K. -Y. .

ACS APPLIED MATERIALS & INTERFACES, 2010, 2 (02) :511-520

[2] Spin-Cast and Patterned Organophosphonate Self-Assembled Monolayer Dielectrics on Metal-Oxide-Activated Si [J].

Acton, Orb ;

Hutchins, Daniel ;

Arnadottir, Liney ;

Weidner, Tobias ;

Cernetic, Nathan ;

Ting, Guy G. ;

Kim, Tae-Wook ;

Castner, David G. ;

Ma, Hong ;

Jen, Alex K. -Y. .

ADVANCED MATERIALS, 2011, 23 (16) :1899-+

[3] Ultrahigh electron mobility in suspended graphene [J].

Bolotin, K. I. ;

Sikes, K. J. ;

Jiang, Z. ;

Klima, M. ;

Fudenberg, G. ;

Hone, J. ;

Kim, P. ;

Stormer, H. L. .

SOLID STATE COMMUNICATIONS, 2008, 146 (9-10) :351-355

[4] Geometrical approach for the study of G′ band in the Raman spectrum of monolayer graphene, bilayer graphene, and bulk graphite [J].

Cancado, L. G. ;

Reina, A. ;

Kong, J. ;

Dresselhaus, M. S. .

PHYSICAL REVIEW B, 2008, 77 (24)

[5] The electronic properties of graphene [J].

Castro Neto, A. H. ;

Guinea, F. ;

Peres, N. M. R. ;

Novoselov, K. S. ;

Geim, A. K. .

REVIEWS OF MODERN PHYSICS, 2009, 81 (01) :109-162

[6] Systematic Doping Control of CVD Graphene Transistors with Functionalized Aromatic Self-Assembled Monolayers [J].

Cernetic, Nathan ;

Wu, Sanfeng ;

Davies, Joshua A. ;

Krueger, Benjamin W. ;

Hutchins, Daniel O. ;

Xu, Xiaodong ;

Ma, Hong ;

Jen, Alex K. -Y. .

ADVANCED FUNCTIONAL MATERIALS, 2014, 24 (22) :3464-3470

[7] Bottom-contact small-molecule n-type organic field effect transistors achieved via simultaneous modification of electrode and dielectric surfaces [J].

Cernetic, Nathan ;

Acton, Orb ;

Weidner, Tobias ;

Hutchins, Daniel O. ;

Baio, Joe E. ;

Ma, Hong ;

Jen, Alex K. -Y. .

ORGANIC ELECTRONICS, 2012, 13 (12) :3226-3233

[8] General observation of n-type field-effect behaviour in organic semiconductors [J].

Chua, LL ;

Zaumseil, J ;

Chang, JF ;

Ou, ECW ;

Ho, PKH ;

Sirringhaus, H ;

Friend, RH .

NATURE, 2005, 434 (7030) :194-199

[9] Controlling Electric Dipoles in Nanodielectrics and Its Applications for Enabling Air-Stable n-Channel Organic Transistors [J].

Chung, Yoonyoung ;

Verploegen, Eric ;

Vailionis, Arturas ;

Sun, Yun ;

Nishi, Yoshio ;

Murmann, Boris ;

Bao, Zhenan .

NANO LETTERS, 2011, 11 (03) :1161-1165

[10] Doping graphene with metal contacts [J].

Giovannetti, G. ;

Khomyakov, P. A. ;

Brocks, G. ;

Karpan, V. M. ;

van den Brink, J. ;

Kelly, P. J. .

PHYSICAL REVIEW LETTERS, 2008, 101 (02)

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