Measurement and analysis of internal loss and injection efficiency for continuous-wave blue semipolar (20(2)over-bar(1)over-bar III-nitride laser diodes with chemically assisted ion beam etched facets

被引：26

作者：

Becerra, Daniel L. ^{[1
]}

Kuritzky, Leah Y. ^{[1
]}

Nedy, Joseph ^{[2
]}

Abbas, Arwa Saud ^{[1
]}

Pourhashemi, Arash ^{[1
]}

Farrell, Robert M. ^{[1
]}

Cohen, Daniel A. ^{[1
]}

DenBaars, Steven P. ^{[1
,2
]}

Speck, James S. ^{[1
]}

Nakamura, Shuji ^{[1
,2
]}

机构：

[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA

[2] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 09期

基金：

美国国家科学基金会;

关键词：

GAN LASER; INGAN; MIRRORS;

D O I：

10.1063/1.4943143

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Continuous-wave blue semipolar (20 (2) over bar(1) over bar) III-nitride laser diodes were fabricated with highly vertical, smooth, and uniform mirror facets produced by chemically assisted ion beam etching. Uniform mirror facets are a requirement for accurate experimental determination of internal laser parameters, including internal loss and injection efficiency, which were determined to be 9 cm(-1) and 73%, respectively, using the cavity length dependent method. The cavity length of the uncoated devices was varied from 900 mu m to 1800 mu m, with threshold current densities ranging from 3 kA/cm(2) to 9 kA/cm(2) and threshold voltages ranging from 5.5V to 7 V. The experimentally determined internal loss was found to be in good agreement with a calculated value of 9.5 cm(-1) using a 1D mode solver. The loss in each layer was calculated and in light of the analysis several modifications to the laser design are proposed. (C) 2016 AIP Publishing LLC.

引用

页数：5

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