Procedure to decouple reflectance and down-shifting effects in luminescent down-shifting enhanced photovoltaics

被引:10
作者
Gabr, Ahmed M. [1 ]
Walker, Alexandre W. [2 ]
Wilkins, Matthew M. [1 ]
Kleiman, Rafael [3 ]
Hinzer, Karin [1 ]
机构
[1] Univ Ottawa, SUNLAB, 25 Templeton St, Ottawa, ON K1N 6N5, Canada
[2] Natl Res Council Canada, 1200 Montreal Rd, Ottawa, ON K1A 0R6, Canada
[3] McMaster Univ, Dept Engn Phys, 1280 Main St West, Hamilton, ON L8S 4L7, Canada
基金
加拿大自然科学与工程研究理事会;
关键词
Reflection - Transfer matrix method - Photovoltaic effects;
D O I
10.1364/OE.25.00A530
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
The down-shifting (DS) process is a purely optical approach used to improve the short-wavelength response of a solar cell by shifting high-energy photons to the visible range, which can be more efficiently absorbed by the solar cell. In addition to the DS effect, coupling a DS layer to the top surface of a solar cell results in a change in surface reflectance. The two effects are intermixed and therefore, usually reported as a single effect. Here we propose a procedure to decouple the two effects. Analytical equations are derived to decouple the two effects, that consider the experimentally measured quantum efficiency of the solar cell with and without the DS layer, in addition to transfer matrix simulations of the parasitic absorption in the device structure. In this work, an overall degradation of 0.46 mA/cm(2) is observed when adding a DS layer composed of silicon nanocrystals embedded in a quartz matrix to a silicon solar cell of 11% baseline efficiency. To fully understand the contribution from each effect, the surface reflectance and DS effects are decoupled and quantified using the described procedure. We observe an enhancement of 0.27 mA/cm(2) in short-circuit current density due to the DS effect, while the surface reflectance effect leads to a degradation of 0.73 mA/cm(2) in short-circuit current density. (C) 2017 Optical Society of America
引用
收藏
页码:A530 / A538
页数:9
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