On the mechanism of porous silicon formation

被引：25

作者：

Goryachev, DN ^{[1
]}

Belyakov, LV ^{[1
]}

Sreseli, OM ^{[1
]}

机构：

[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

SEMICONDUCTORS | 2000年 / 34卷 / 09期

关键词：

D O I：

10.1134/1.1309429

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

A new qualitative mechanism of pore nucleation and initial stages of porous silicon (por-Si) growth was proposed. The emphasis was on the charge exchange between Si2+ ions generated by electrolytic or chemical oxidation of initial silicon (disproportionation reaction). The mechanism eliminates, to a large extent, the contradictions typical of earlier proposed schemes of por-Si growth; in particular, it explains the morphological features of por-Si produced under various experimental conditions. The impact of light in these processes was also considered. (C) 2000 MAIK "Nauka/Interperiodica".

引用

页码：1090 / 1093

页数：4

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