Intergranular magnetoresistance in Sr2FeMoO6 from a magnetic tunnel barrier mechanism across grain boundaries

被引:126
作者
Sarma, D. D. [1 ]
Ray, Sugata
Tanaka, K.
Kobayashi, M.
Fujimori, A.
Sanyal, P.
Krishnamurthy, H. R.
Dasgupta, C.
机构
[1] Indian Inst Sci, Solid State & Struct Chem Unit, Bangalore 560012, Karnataka, India
[2] Indian Inst Sci, Dept Phys, Ctr Condensed Matter Theory, Bangalore 560012, Karnataka, India
[3] Indian Assoc Cultivat Sci, Ctr Adv Mat, Kolkata 700032, W Bengal, India
[4] Tokyo Inst Technol, Mat & Stuct Lab, Yokohama, Kanagawa 2268503, Japan
[5] Univ Tokyo, Dept Phys, Tokyo 1130033, Japan
[6] Univ Tokyo, Dept Complex Sci & Engn, Bunkyo Ku, Tokyo 1130033, Japan
[7] Jawaharlal Nehru Ctr Adv Sci Res, Bangalore, Karnataka, India
关键词
D O I
10.1103/PhysRevLett.98.157205
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
We present magnetization (M) and magnetoresistance (MR) data for a series of Sr2FeMoO6 samples with independent control on antisite defect and grain-boundary densities, which reveal several unexpected features, including a novel switching-like behavior of MR with M. These, in conjunction with model calculations, establish that the MR in Sr2FeMoO6 is dominantly controlled by a new mechanism, derived from the magnetic polarization of grain-boundary regions acting like spin valves, leading to behavior qualitatively different from that usually encountered in tunneling MR. We show that a simple and useful experimental signature for the presence of this spin-valve-type MR (SVMR) is a wider hysteresis in MR compared to that in M.
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页数:4
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