Triple high κ stacks (Al2O3/HfO2/Al2O3) with high pressure (10atm) H2 and D2 annealing for SONOS type flash memory device applications

被引：0

作者：

Jeon, S ^{[1
]}

Choi, SM ^{[1
]}

Park, HY ^{[1
]}

Hwang, HS ^{[1
]}

Han, JH ^{[1
]}

Chae, H ^{[1
]}

Chae, SD ^{[1
]}

Kim, JH ^{[1
]}

Kim, MK ^{[1
]}

Jeong, YS ^{[1
]}

Park, YD ^{[1
]}

Seo, S ^{[1
]}

Lee, JW ^{[1
]}

Kim, CW ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, MD Lab, Kyungki, South Korea

来源：

2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY | 2004年

关键词：

high k; SONOS; flash memory; reliability; high pressure;

D O I：

暂无

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this article, we report on electrical and memory properties of triple high-kappa stacks (Al2O3/HfO2/ Al2O3) with high pressure (10 atm) H-2 and D-2 annealing for SONOS type flash memory device applications. For 3nm-thick Al2O3/10nm-thick HfO2/10nm-thick Al2O3 (AHA) stack, memory window (M.W.) of 1.4V at programming/erasing (P/E) condition of +/-6V/1-2msec was obtained. In addition, high pressure D-2 annealed sample shows improved retention characteristics such as large memory window, and low slope per decade with retention time.

引用

页码：53 / 55

页数：3

共 7 条

[1] Effects of two-step high temperature deuterium anneals on SONOS nonvolatile memory devices [J].