Progress of p-channel bottom-gate poly-Si thin-film transistor by nickel silicide seed-induced lateral crystallization

被引：4

作者：

Lee, Sol Kyu ^{[1
]}

Seok, Ki Hwan ^{[1
]}

Park, Jae Hyo ^{[1
]}

Kim, Hyung Yoon ^{[1
]}

Chae, Hee Jae ^{[1
]}

Jang, Gil Su ^{[1
]}

Lee, Yong Hee ^{[1
]}

Han, Ji Su ^{[1
]}

Joo, Seung Ki ^{[1
]}

机构：

[1] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151742, South Korea

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2016年 / 122卷 / 06期

关键词：

SOLID-PHASE; PERFORMANCE; TFTS;

D O I：

10.1007/s00339-016-0133-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Excimer laser annealing (ELA) is known to be the most common crystallization technology for the fabrication of low-temperature polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) in the mass production industry. This technology, however, cannot be applied to bottom-gate (BG) TFTs, which are well developed for the liquid-crystal display (LCD) back-planes, because strong laser energy of ELA can seriously damage the other layers. Here, we propose a novel high-performance BG poly-Si TFT using Ni silicide seed-induced lateral crystallization (SILC). The SILC technology renders it possible to ensure low damage in the layers, smooth surface, and longitudinal large grains in the channel. It was observed that the electrical properties exhibited a steep subthreshold slope of 110 mV/dec, high field-effect mobility of 304 cm(2)/Vsec, high I-on/I-off ratio of 5.9 x 10(7), and a low threshold voltage of -3.9 V.

引用

页数：6

共 22 条

[1]

Akiyama M., 1988, IEDM, V88, P268

[2] Effects of longitudinal grain boundaries on the performance of MILC-TFT's [J].

Bhat, GA ;

Jin, ZH ;

Kwok, HS ;

Wong, M .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (02) :97-99

[3] Effect of Ni silicide density on electrical performance of silicide-induced crystallized polycrystalline silicon thin-film transistors [J].

Byun, Chang Woo ;

Reddy, A. Mallikarjuna ;

Son, Se Wan ;

Joo, Seung Ki .

ELECTRONIC MATERIALS LETTERS, 2012, 8 (04) :369-374

[4] Improvement of Electrical Performance of Metal-Induced Laterally Crystallized Polycrystalline Silicon Thin-Film Transistors [J].

Byun, Chang Woo ;

Son, Se Wan ;

Lee, Yong Woo ;

Kang, Hyun Mo ;

Park, Seol Ah ;

Lim, Woo Chang ;

Li, Tao ;

Joo, Seung Ki .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2012, 159 (04) :J115-J121

[5] High Performance Poly-Si Thin Film Transistors Fabricated by Novel and Simple Crystallization Method Using Ni-Silicide Seeds [J].

Byun, Chang Woo ;

Son, Se Wan ;

Lee, Yong Woo ;

Kang, Hyun Mo ;

Park, Seol Ah ;

Lim, Woo Chang ;

Li, Tao ;

Joo, Seung Ki .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2011, 158 (11) :J354-J358

[6] Inverted staggered poly-Si thin-film transistor with planarized SOG gate insulator [J].

Cheon, Jun Hyuk ;

Bae, Jung Ho ;

Jang, Jin .

IEEE ELECTRON DEVICE LETTERS, 2008, 29 (03) :235-237

[7] Giant-grain silicon (GGS) and its application to stable thin-film transistor [J].

Choi, JH ;

Cheon, JH ;

Kim, SK ;

Jang, J .

DISPLAYS, 2005, 26 (03) :137-142

[8] PERFORMANCE OF THIN-FILM TRANSISTORS ON POLYSILICON FILMS GROWN BY LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION AT VARIOUS PRESSURES [J].

DIMITRIADIS, CA ;

COXON, PA ;

DOZSA, L ;

PAPADIMITRIOU, L ;

ECONOMOU, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (03) :598-606

[9] Invited paper: Technological challenges for large-size AMOLED display [J].

Kim, Hye Dong ;

Jeong, Jae Kyeong ;

Chung, Hyun-Joong ;

Mo, Yeon-Gon .

2008 SID INTERNATIONAL SYMPOSIUM, DIGEST OF TECHNICAL PAPERS, VOL XXXIX, BOOKS I-III, 2008, 39 :291-294

[10] Kink-free polycrystalline silicon double-gate elevated-channel thin-film transistors [J].

Kumar, A ;

Sin, JKO ;

Nguyen, CT ;

Ko, PK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (12) :2514-2520

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