Observation of full charge collection efficiency in heavily irradiated n plus p strip detectors irradiated up to 3 x 1015 neq/cm2

被引：29

作者：

Mandic, Igor ^{[1
]}

Cindro, Vladimir ^{[1
]}

Gorisek, Andrej ^{[1
]}

Kramberger, Gregor ^{[1
]}

Mikuz, Marko ^{[1
,2
]}

Zavrtanik, Marko ^{[1
]}

机构：

[1] Jozef Stefan Inst, Ljubljana, Slovenia

[2] Univ Ljubljana, Fac Math & Phys, Ljubljana, Slovenia

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2010年 / 612卷 / 03期

关键词：

Microstrip detectors; P-type silicon; Radiation Hardness; Super LHC; SILICON DETECTORS; MICROSTRIP DETECTORS; NEUTRONS; BIAS;

D O I：

10.1016/j.nima.2009.08.004

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

In this work we report measurements of signals caused by fast electrons from a Sr-90 source detected by n-type readout strips implanted in p-type bulk silicon, read out with a SCT128 chip. Charge collection measurements with detectors irradiated with reactor neutrons Up to 10(16) n(eq)/cm(2) were performed up to very high reverse bias voltages of over 2000V. The most probable value of collected charge measured with detectors irradiated up to 3 x 10(15) n(eq)/cm(2) was as high as that measured before irradiation. Detectors irradiated to 10(16) n(eq)/cm(2) also exhibited very good performance. Because of the large resistance of the heavily irradiated silicon detectors they can be biased with a high forward voltage, allowing charge collection measurements to also be performed in the forward bias mode of operation. Simulations of charge collection in an irradiated detector were compared to measurements. (C) 2009 Elsevier B.V. All rights reserved.

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收藏

页码：474 / 477

页数：4

相关论文

共 15 条

[1] SCTA - A rad-hard BiCMOS analogue readout ASIC for the ATLAS semiconductor tracker [J].

Anghinolfi, F ;

Dabrowski, W ;

Delagnes, E ;

Kaplon, J ;

Koetz, U ;

Jarron, P ;

Lugiez, F ;

Posch, C ;

Roe, S ;

Weilhammer, P .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1997, 44 (03) :298-302

[2] Response to minimum ionising particles of p-type substrate silicon microstrip detectors irradiated with neutrons to LHC upgrade doses [J].

Casse, G. ;

Allport, P. P. ;

Greenall, A. .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2007, 581 (1-2) :318-321

[3] Performances of miniature microstrip detectors made on oxygen enriched p-type substrates after very high proton irradiation [J].

Casse, G ;

Allport, PP ;

Garcia, SMI ;

Lozano, M ;

Turner, PR .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2004, 535 (1-2) :362-365

[4] First results on the charge collection properties of segmented detectors made with p-type bulk silicon [J].

Casse, G ;

Allport, PP ;

Bowcock, TJV ;

Greenall, A ;

Hanlon, M ;

Jackson, JN .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 487 (03) :465-470

[5] Charge collection efficiency measurements for segmented silicon detectors irradiatedto 1 x 1016 n cm-2 [J].

Casse, Gianluigi ;

Affolder, Antony ;

Allport, Philip P. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2008, 55 (03) :1695-1699

[6] Operation of heavily irradiated silicon detectors under forward bias [J].

Chilingarov, A ;

Sloan, T .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1997, 399 (01) :35-37

[7] Radiation damage in p-type silicon irradiated with neutrons and protons [J].

Cindro, Vladimir ;

Kramberger, Gregor ;

Lozano, Manuel ;

Mandic, Igor ;

Mikuz, Marko ;

Pellegrini, Giulio ;

Pulko, Jozef ;

Ullan, Miguel ;

Zavrtanik, Marko .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2009, 599 (01) :60-65

[8]

DAWSON I, 2006, ATLAS TRACK UPGR WOR

[9] Influence of trapping on silicon microstrip detector design and performance [J].

Kramberger, G ;

Cindro, V ;

Mandic, I ;

Mikuz, M ;

Zavrtanik, M .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2002, 49 (04) :1717-1723

[10] Determination of effective trapping times for electrons and holes in irradiated silicon [J].

Kramberger, G ;

Cindro, V ;

Mandic, I ;

Mikuz, M ;

Zavrtanik, M .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 2002, 476 (03) :645-651