Investigation on the electronic state of In-doped ZnO nanocrystals by hard X-ray photoemission spectroscopy

被引：0

作者：

Jung, Mina

Ha, Sunyeo

Oh, Seungjun

Koo, Jieun

Kim, Jungjin ^{[2
]}

Kobayashi, Keisuke ^{[2
]}

Murakami, Yoshihiro ^{[3
]}

Jeon, Tae-In ^{[1
]}

Yao, Takafumi ^{[4
]}

Chang, Jiho ^{[1
]}

机构：

[1] Korea Maritime Univ, Div Elect & Elect Engn, Pusan 606791, South Korea

[2] JASRI Spring 8, Sayo, Hyogo 6795198, Japan

[3] Tohoku Univ, Tech Serv Div, Sendai, Miyagi 9808577, Japan

[4] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9808577, Japan

来源：

CURRENT APPLIED PHYSICS | 2009年 / 9卷 / 02期

基金：

新加坡国家研究基金会;

关键词：

ZnO; In-doping; Electronic structure; Phase transition; INDIUM-OXIDE; SPRAY-PYROLYSIS; THIN-FILMS; NANOBELTS;

D O I：

10.1016/j.cap.2008.12.051

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ZnO:In nanocrystals (NCs) with various In contents were synthesized by using a mixed source vapor transportation method. The morphological variation and electronic structure of ZnO: In NCs were studied by bulk sensitive hard X-ray photoemission spectroscopy (HX-PES). ZnO: In NCs are classified into ZnO-like hexagonal and In2O3-like cubic groups, based on the crystal structure, and we have estimated the In content for the phase transformation to be as high as 35 atomic% (atm.%). A filled electronic state in the conduction band was observed from the ZnO-like group, which is regarded as a metallic state, due to an increase of extrinsic carrier density. (C) 2009 Elsevier B.V. All rights reserved.

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页码：E165 / E168

页数：4

相关论文

共 15 条

[1] Influence of In incorporation on the electronic structure of ZnO nanowires [J].

Bae, SY ;

Choi, HC ;

Na, CW ;

Park, J .

APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3

[2] Synchrotron radiation photoemission study of indium oxide surface prepared by spray pyrolysis method [J].

Brinzari, V ;

Korotcenkov, G ;

Matolin, V .

APPLIED SURFACE SCIENCE, 2005, 243 (1-4) :335-344

[3] A photochemical method for the preparation of indium oxide and indium-cobalt oxides thin films [J].

Buono-Core, GE ;

Cabello, G ;

Torrejon, B ;

Tejos, M ;

Hill, RH .

MATERIALS RESEARCH BULLETIN, 2005, 40 (10) :1765-1774

[4] Al-doped zinc oxide films deposited by simultaneous rf and dc excitation of a magnetron plasma: Relationships between plasma parameters and structural and electrical film properties [J].

Cebulla, R ;

Wendt, R ;

Ellmer, K .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) :1087-1095

[5] Comparison of valence band x-ray photoelectron spectrum between Al-N-codoped and N-doped ZnO films [J].

Cong, GW ;

Peng, WQ ;

Wei, HY ;

Han, XX ;

Wu, JJ ;

Liu, XL ;

Zhu, QS ;

Wang, ZG ;

Lu, JG ;

Ye, ZZ ;

Zhu, LP ;

Qian, HJ ;

Su, R ;

Hong, CH ;

Zhong, J ;

Ibrahim, K ;

Hu, TD .

APPLIED PHYSICS LETTERS, 2006, 88 (06)

[6] X-RAY PHOTOEMISSION SPECTROSCOPY STUDIES OF SN-DOPED INDIUM-OXIDE FILMS [J].

FAN, JCC ;

GOODENOUGH, JB .

JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3524-3531

[7] Unraveling the conduction mechanism of Al-doped ZnO films by valence band soft x-ray photoemission spectroscopy -: art. no. 042104 [J].

Gabás, M ;

Gota, S ;

Ramos-Barrado, JR ;

Sánchez, M ;

Barrett, NT ;

Avila, J ;

Sacchi, M .

APPLIED PHYSICS LETTERS, 2005, 86 (04) :042104-1

[8] Temperature-dependent photoluminescence of quasialigned Al-doped ZnO nanorods [J].

He, H. P. ;

Tang, H. P. ;

Ye, Z. Z. ;

Zhu, L. P. ;

Zhao, B. H. ;

Wang, L. ;

Li, X. H. .

APPLIED PHYSICS LETTERS, 2007, 90 (02)

[9] Room-temperature ultraviolet nanowire nanolasers [J].

Huang, MH ;

Mao, S ;

Feick, H ;

Yan, HQ ;

Wu, YY ;

Kind, H ;

Weber, E ;

Russo, R ;

Yang, PD .

SCIENCE, 2001, 292 (5523) :1897-1899

[10] Indium-doped zinc oxide nanobelts [J].

Jie, JS ;

Wang, GZ ;

Han, XH ;

Yu, QX ;

Liao, Y ;

Li, GP ;

Hou, JG .

CHEMICAL PHYSICS LETTERS, 2004, 387 (4-6) :466-470