Optimization of porous silicon preparation technology for SERS applications

被引:43
作者
Chursanova, M. V. [1 ]
Germash, L. P. [1 ]
Yukhymchuk, V. O. [2 ]
Dzhagan, V. M. [2 ]
Khodasevich, I. A. [3 ]
Cojoc, D. [4 ]
机构
[1] Natl Tech Univ Ukraine, Kyiv Polytech Inst, UA-03056 Kiev, Ukraine
[2] Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, UA-03028 Kiev, Ukraine
[3] Natl Acad Sci Belarus, BI Stepanov Phys Inst, Minsk 220072, BELARUS
[4] CNR INFM, Lab Nazl TASC, I-34012 Trieste, Italy
关键词
SERS substrate; Porous silicon; Silver crystallites; Rhodamine; 6G; ENHANCED RAMAN-SCATTERING; SURFACE;
D O I
10.1016/j.apsusc.2009.12.036
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A series of porous silicon samples prepared at different etching parameters, namely etchant composition, etching time and current density, was investigated as substrates for surface-enhanced Raman scattering (SERS). Silver nanostructures were deposited on porous silicon by immersion plating method and Rhodamine 6G was used as analyte. The relation between the etching parameters, morphology of porous silicon surface and its SERS efficiency after silver deposition is examined. We show that a high HF content in the etchant allows the formation of a film with close-packed silver nanocrystals, which possess strong surface enhancement properties. (C) 2009 Elsevier B. V. All rights reserved.
引用
收藏
页码:3369 / 3373
页数:5
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