Mechanistic Studies of Gas Reactions with Multicomponent Solids: What Can We Learn By Combining NAP XPS and Atomic Resolution STEM/EDX?

被引:6
作者
Sirotina, Anna P. [1 ,2 ]
Callaert, Carolien [3 ]
Volykhov, Andrey A. [1 ,4 ]
Frolov, Alexander S. [1 ]
Sanchez-Barriga, Jaime [5 ]
Knop-Gericke, Axel [6 ]
Hadermann, Joke [3 ]
Yashina, Lada V. [1 ]
机构
[1] Lomonosov Moscow State Univ, Leninskie Gory 1-3, Moscow 119991, Russia
[2] RAS, Inst Nanotechnol Microelect, Nagatinskaya Str 16A-11, Moscow 115487, Russia
[3] Univ Antwerp, Dept Phys, EMAT, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
[4] RAS, Kurnakov Inst Gen & Inorgan Chem, Leninsky Ave 31, Moscow 119991, Russia
[5] Elektronenspeicherring BESSY 2, Helmholtz Zentrum Berlin Mat & Energie, Albert Einstein Str 15, D-12489 Berlin, Germany
[6] Max Planck Gesell, Dept Inorgan Chem, Fritz Haber Inst, Faradayweg 4-6, D-14195 Berlin, Germany
基金
俄罗斯科学基金会;
关键词
INITIO MOLECULAR-DYNAMICS; ELECTRON-STIMULATED OXIDATION; AB-INITIO; PHOTOELECTRON-SPECTROSCOPY; SURFACE OXIDATION; OXIDE; GROWTH; SILICON; TRANSITION; REACTIVITY;
D O I
10.1021/acs.jpcc.9b05052
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Rapid development of experimental techniques has enabled real time studies of solid gas reactions at the level reaching the atomic scale. In the present paper, we focus on a combination of atomic resolution STEM/EDX, which visualizes the reaction zone, and near ambient pressure (NAP) XPS, which collects information for a surface layer of variable thickness under reaction conditions. We compare the behavior of two affined topological insulators, Bi2Te3 and Sb2Te3. We used a simple reaction with molecular oxygen occurring at 298 K, which is of practical importance to avoid material degradation. Despite certain limitations, a combination of in situ XPS and ex situ cross-sectional STEM/EDX allowed us to obtain a self-consistent picture of the solid gas reaction mechanism for oxidation of Sb2Te3 and Bi2Te3 crystals, which includes component redistribution between the oxide and the subsurface layer and Te segregation with formation of a thin ordered layer at the interface. The process is multistep in case of both compounds. At the very beginning of the oxidation process the reactivity is determined by the energy benefit of the corresponding element oxygen bond formation. Further in the oxidation process, the behavior of these two compounds becomes similar and features component redistribution between the oxide and the subsurface layer.
引用
收藏
页码:26201 / 26210
页数:10
相关论文
共 46 条
  • [21] OXIDATION OF METALS
    LAWLESS, KR
    [J]. REPORTS ON PROGRESS IN PHYSICS, 1974, 37 (02) : 231 - +
  • [22] THERMAL-OXIDATION OF SILICON IN DRY OXYGEN GROWTH-RATE ENHANCEMENT IN THE THIN REGIME .1. EXPERIMENTAL RESULTS
    MASSOUD, HZ
    PLUMMER, JD
    IRENE, EA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (11) : 2685 - 2693
  • [23] GROWTH OF NATIVE OXIDE ON A SILICON SURFACE
    MORITA, M
    OHMI, T
    HASEGAWA, E
    KAWAKAMI, M
    OHWADA, M
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (03) : 1272 - 1281
  • [24] OXIDATION OF SILICON
    MOTT, NF
    RIGO, S
    ROCHET, F
    STONEHAM, AM
    [J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1989, 60 (02): : 189 - 212
  • [25] ELECTRON-STIMULATED OXIDATION OF SILICON SURFACES
    MUNOZ, MC
    SACEDON, JL
    [J]. JOURNAL OF CHEMICAL PHYSICS, 1981, 74 (08) : 4693 - 4700
  • [26] In situ spectroscopy of intrinsic Bi2Te3 topological insulator thin films and impact of extrinsic defects
    Ngabonziza, P.
    Heimbuch, R.
    de Jong, N.
    Klaassen, R. A.
    Stehno, M. P.
    Snelder, M.
    Solmaz, A.
    Ramankutty, S. V.
    Frantzeskakis, E.
    van Heumen, E.
    Koster, G.
    Golden, M. S.
    Zandvliet, H. J. W.
    Brinkman, A.
    [J]. PHYSICAL REVIEW B, 2015, 92 (03)
  • [27] The role of metal vacancies during high-temperature oxidation of alloys
    Oleksak, Richard P.
    Kapoor, Monica
    Perea, Daniel. E.
    Holcomb, Gordon R.
    Dogan, Omer N.
    [J]. NPJ MATERIALS DEGRADATION, 2018, 2 (01)
  • [28] Real-time imaging of adatom-promoted graphene growth on nickel
    Patera, Laerte L.
    Bianchini, Federico
    Africh, Cristina
    Dri, Carlo
    Soldano, German
    Mariscal, Marcelo M.
    Peressi, Maria
    Comelli, Giovanni
    [J]. SCIENCE, 2018, 359 (6381) : 1243 - 1246
  • [29] Preferential CO oxidation in hydrogen (PROX) on ceria-supported catalysts, part I:: Oxidation state and surface species on Pt/CeO2 under reaction conditions
    Pozdnyakova, O
    Teschner, D
    Wootsch, A
    Kröhnert, J
    Steinhauer, B
    Sauer, H
    Toth, L
    Jentoft, FC
    Knop-Gericke, A
    Paál, Z
    Schlögl, R
    [J]. JOURNAL OF CATALYSIS, 2006, 237 (01) : 1 - 16
  • [30] Ambient pressure photoelectron spectroscopy: A new tool for surface science and nanotechnology
    Salmeron, M.
    Schlogl, R.
    [J]. SURFACE SCIENCE REPORTS, 2008, 63 (04) : 169 - 199