Mechanistic Studies of Gas Reactions with Multicomponent Solids: What Can We Learn By Combining NAP XPS and Atomic Resolution STEM/EDX?

被引:6
作者
Sirotina, Anna P. [1 ,2 ]
Callaert, Carolien [3 ]
Volykhov, Andrey A. [1 ,4 ]
Frolov, Alexander S. [1 ]
Sanchez-Barriga, Jaime [5 ]
Knop-Gericke, Axel [6 ]
Hadermann, Joke [3 ]
Yashina, Lada V. [1 ]
机构
[1] Lomonosov Moscow State Univ, Leninskie Gory 1-3, Moscow 119991, Russia
[2] RAS, Inst Nanotechnol Microelect, Nagatinskaya Str 16A-11, Moscow 115487, Russia
[3] Univ Antwerp, Dept Phys, EMAT, Groenenborgerlaan 171, B-2020 Antwerp, Belgium
[4] RAS, Kurnakov Inst Gen & Inorgan Chem, Leninsky Ave 31, Moscow 119991, Russia
[5] Elektronenspeicherring BESSY 2, Helmholtz Zentrum Berlin Mat & Energie, Albert Einstein Str 15, D-12489 Berlin, Germany
[6] Max Planck Gesell, Dept Inorgan Chem, Fritz Haber Inst, Faradayweg 4-6, D-14195 Berlin, Germany
基金
俄罗斯科学基金会;
关键词
INITIO MOLECULAR-DYNAMICS; ELECTRON-STIMULATED OXIDATION; AB-INITIO; PHOTOELECTRON-SPECTROSCOPY; SURFACE OXIDATION; OXIDE; GROWTH; SILICON; TRANSITION; REACTIVITY;
D O I
10.1021/acs.jpcc.9b05052
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Rapid development of experimental techniques has enabled real time studies of solid gas reactions at the level reaching the atomic scale. In the present paper, we focus on a combination of atomic resolution STEM/EDX, which visualizes the reaction zone, and near ambient pressure (NAP) XPS, which collects information for a surface layer of variable thickness under reaction conditions. We compare the behavior of two affined topological insulators, Bi2Te3 and Sb2Te3. We used a simple reaction with molecular oxygen occurring at 298 K, which is of practical importance to avoid material degradation. Despite certain limitations, a combination of in situ XPS and ex situ cross-sectional STEM/EDX allowed us to obtain a self-consistent picture of the solid gas reaction mechanism for oxidation of Sb2Te3 and Bi2Te3 crystals, which includes component redistribution between the oxide and the subsurface layer and Te segregation with formation of a thin ordered layer at the interface. The process is multistep in case of both compounds. At the very beginning of the oxidation process the reactivity is determined by the energy benefit of the corresponding element oxygen bond formation. Further in the oxidation process, the behavior of these two compounds becomes similar and features component redistribution between the oxide and the subsurface layer.
引用
收藏
页码:26201 / 26210
页数:10
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