Frictional drag in dilute bilayer 2D hole systems

被引：37

作者：

Hwang, EH ^{[1
]}

Das Sarma, S

Braude, V

Stern, A

机构：

[1] Univ Maryland, Dept Phys, Condensed Matter Theory Ctr, College Pk, MD 20742 USA

[2] Weizmann Inst Sci, Dept Condensed Matter Phys, IL-76100 Rehovot, Israel

来源：

PHYSICAL REVIEW LETTERS | 2003年 / 90卷 / 08期

关键词：

D O I：

10.1103/PhysRevLett.90.086801

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We develop a theory for frictional drag between two 2D hole layers in a dilute bilayer GaAs hole system, including effects of hole-hole and hole-phonon interactions. Our calculations suggest significant enhancement of hole drag transresistivity over the corresponding electron drag results. This enhancement originates from the exchange induced renormalization of the single-layer compressibility and the strong dependence of single-layer conductivity on density. We also address the effect of hole-phonon interaction on the drag temperature dependence. Our calculated results are in reasonable quantitative agreement with recent experimental observations.

引用

页数：4

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