Kinetics of charge carrier recombination in organic light-emitting diodes

被引：62
|
作者：
Kalinowski, J [1 ]
Camaioni, N
Di Marco, P
Fattori, V
Martelli, A
机构：
[1] CNR, Ist Fotochim & Radiaz Alta Energia, I-40129 Bologna, Italy
[2] Gdansk Tech Univ, Dept Mol Phys, PL-80952 Gdansk, Poland
来源：
APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 05期
关键词：
D O I：
10.1063/1.120805
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The temporal behavior of the electroluminescence (EL) from thin-film indium-tin-oxide (ITO)/aromatic diamine (TPD)/Al(III) s-hydroxyquinoline (Alq(3))/Mg/Ag light-emitting diodes (LEDs) upon the application of a rectangular driving voltage is analyzed in terms of the electron-hole recombination on the TPD/Alq(3) interface. From the long-time component of the temporal decay of the EL intensity the electron-hole recombination coefficient gamma=(1.1+/-0.5)x10(-10) cm(3)/s is determined in good agreement with the value expected on the basis of the Langevin theory of recombination with the recombination process controlled by the motion of holes in the hole-transporting TPD layer of the LED. (C) 1998 American Institute of Physics.
引用
收藏
页码：513 / 515
页数：3
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