Influence of stress on optical transitions in GaN nanorods containing a single InGaN/GaN quantum disk

被引:18
作者
Zhuang, Y. D. [1 ]
Bruckbauer, J. [2 ]
Shields, P. A. [1 ]
Edwards, P. R. [2 ]
Martin, R. W. [2 ]
Allsopp, D. W. E. [1 ]
机构
[1] Univ Bath, Dept Elect & Elect Engn, Bath BA2 7AY, Avon, England
[2] Univ Strathclyde, Dept Phys, SUPA, Glasgow G4 0NG, Lanark, Scotland
基金
英国工程与自然科学研究理事会;
关键词
LIGHT-EMITTING-DIODES; ARRAYS; BLUE;
D O I
10.1063/1.4898685
中图分类号
O59 [应用物理学];
学科分类号
摘要
Cathodoluminescence (CL) hyperspectral imaging has been performed on GaN nanorods containing a single InGaN quantum disk (SQD) with controlled variations in excitation conditions. Two different nanorod diameters (200 and 280 nm) have been considered. Systematic changes in the CL spectra from the SQD were observed as the accelerating voltage of the electron beam and its position of incidence are varied. It is shown that the dominant optical transition in the SQD varies across the nanorod as a result of interplay between the contributions of the deformation potential and the quantum-confined Stark effect to the transition energy as consequence of radial variation in the pseudomorphic strain. (C) 2014 AIP Publishing LLC.
引用
收藏
页数:7
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