High-power surface emitting semiconductor laser with extended vertical compound cavity

被引：64

作者：

McInerney, JG ^{[1
]}

Mooradian, A ^{[1
]}

Lewis, A ^{[1
]}

Shchegrov, A ^{[1
]}

Strzelecka, EM ^{[1
]}

Lee, D ^{[1
]}

Watson, JP ^{[1
]}

Liebman, A ^{[1
]}

Carey, GP ^{[1
]}

Cantos, BD ^{[1
]}

Hitchens, WR ^{[1
]}

Heald, D ^{[1
]}

机构：

[1] Novalux Inc, Sunnyvale, CA 94086 USA

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 06期

关键词：

D O I：

10.1049/el:20030300

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Novel, electrically pumped vertical compound cavity InGaAs lasers emitting at 980 nm are described. These have generated I W continuous-wave,e multimode and 0.5 W continuous-wave in a fundamental TEM00 mode and single frequency, with 90% coupling efficiency into a singlemode fibre.

引用

页码：523 / 525

页数：3

共 3 条

[1] High-power VCSEL's:: Single devices and densely packed 2-D-arrays [J].