Effects of carbon-based impurities on graphene growth

被引：12

作者：

Ge, Xiaoming ^{[1
,2
,3
]}

Zhang, Yanhui ^{[1
,2
]}

Chen, Zhiying ^{[1
,2
]}

Liang, Yijian ^{[1
,2
,3
]}

Hu, Shike ^{[1
,2
,3
]}

Sui, Yanping ^{[1
,2
]}

Yu, Guanghui ^{[1
,2
]}

Peng, Songang ^{[4
]}

Jin, Zhi ^{[4
]}

Liu, Xinyu ^{[4
]}

机构：

[1] Chinese Acad Sci, SIMIT, State Key Lab Funct Mat Informat, 865 Changning Rd, Shanghai 200050, Peoples R China

[2] CAS Ctr Excellence Superconducting Elect, 865 Changning Rd, Shanghai 200050, Peoples R China

[3] Univ Chinese Acad Sci, 19A Yuquan Rd, Beijing 100049, Peoples R China

[4] Chinese Acad Sci, Inst Microelect, Microwave Devices & Integrated Circuits Dept, 3 West Beitucheng Rd, Beijing 100029, Peoples R China

来源：

PHYSICAL CHEMISTRY CHEMICAL PHYSICS | 2018年 / 20卷 / 22期

基金：

中国国家自然科学基金;

关键词：

CHEMICAL-VAPOR-DEPOSITION; SINGLE-CRYSTAL GRAPHENE; COPPER FOILS; DOMAINS; SIZE; GRAINS;

D O I：

10.1039/c8cp00944a

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

In this paper, we studied the growth of graphene on an untreated Cu substrate and further studied the effect of carbon-based impurities on the nucleation of graphene in different growth environments. It is found that the impurities on the surface of the Cu substrate easily lead to damage of the graphene, and the impurities do not always promote nucleation as previously reported, but inhibit nucleation in a high etching environment. Finally, based on experimental results, a model of nucleation and growth of graphene around impurities is presented.

引用

页码：15419 / 15423

页数：5

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