Controlling Native Oxidation of HfS2 for 2D Materials Based Flash Memory and Artificial Synapse

被引:58
作者
Jin, Tengyu [1 ,2 ]
Zheng, Yue [2 ]
Gao, Jing [2 ]
Wang, Yanan [2 ]
Li, Enlong [3 ]
Chen, Huipeng [3 ]
Pan, Xuan [2 ]
Lin, Ming [4 ]
Chen, Wei [1 ,2 ,5 ,6 ]
机构
[1] Tianjin Univ, Joint Sch Natl Univ Singapore & Tianjin Univ, Int Campus, Fuzhou 350207, Peoples R China
[2] Natl Univ Singapore, Dept Phys, Singapore 117542, Singapore
[3] Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
[4] ASTAR, Inst Mat Res & Engn IMRE, Innovis 138634, Singapore
[5] Natl Univ Singapore, Dept Chem, Singapore 117542, Singapore
[6] Natl Univ Singapore Suzhou, Res Inst, Suzhou 215123, Peoples R China
关键词
native oxide; hafnium disulfide; flash memory; artificial synapse; neuromorphic computing; THIN-FILMS; SURFACE; WSE2; TRANSITION;
D O I
10.1021/acsami.0c22561
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Two-dimensional (2D) materials based artificial synapses are important building blocks for the brain-inspired computing systems that are promising in handling large amounts of informational data with high energy-efficiency in the future. However, 2D devices usually rely on deposited or transferred insulators as the dielectric layer, resulting in various challenges in device compatibility and fabrication complexity. Here, we demonstrate a controllable and reliable oxidation process to turn 2D semiconductor HfS2 into native oxide, HfOx, which shows good insulating property and clean interface with HfS2. We then incorporate the HfOx/HfS2 heterostructure into a flash memory device, achieving a high on/off current ratio of similar to 10(5), a large memory window over 60 V, good endurance, and a long retention time over similar to 10(3) seconds. In particular, the memory device can work as an artificial synapse to emulate basic synaptic functions and feature good linearity and symmetry in conductance change during long-term potentiation/depression processes. A simulated artificial neural network based on our synaptic device achieves a high accuracy of similar to 88% in MNIST pattern recognition. Our work provides a simple and effective approach for integrating high-k dielectrics into 2D material-based memory and synaptic devices.
引用
收藏
页码:10639 / 10649
页数:11
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