Theory of the sp-d coupling of transition metal impurities with free carriers in ZnO

被引:25
作者
Ciechan, Anna [1 ]
Boguslawski, Piotr [1 ]
机构
[1] Polish Acad Sci, Inst Phys, Al Lotnikow 32-46, PL-02668 Warsaw, Poland
关键词
D O I
10.1038/s41598-021-83258-1
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
The s,p-d exchange coupling between the spins of band carriers and of transition metal (TM) dopants ranging from Ti to Cu in ZnO is studied within the density functional theory. The +U corrections are included to reproduce the experimental ZnO band gap and the dopant levels. The p-d coupling reveals unexpectedly complex features. In particular, (i) the p-d coupling constants N0 beta vary about 10 times when going from V to Ni, (ii) not only the value but also the sign of N0 beta depends on the charge state of the dopant, (iii) the p-d coupling with the heavy holes and the light holes is not the same; in the case of Fe, Co and Ni, N0 beta s for the two subbands can differ twice, and for Cu the opposite sign of the coupling is found for light and heavy holes. The main features of the p-d coupling are determined by the p-d hybridization between the d(TM) and p(O) orbitals. In contrast, the s-d coupling constant N0 alpha is almost the same for all TM ions, and does not depend on the charge state of the dopant. The TM-induced spin polarization of the p(O) orbitals contributes to the s-d coupling, enhancing N0 alpha.
引用
收藏
页数:11
相关论文
共 61 条
[1]   Reformulation of DFT plus U as a Pseudohybrid Hubbard Density Functional for Accelerated Materials Discovery [J].
Agapito, Luis A. ;
Curtarolo, Stefano ;
Nardelli, Marco Buongiorno .
PHYSICAL REVIEW X, 2015, 5 (01)
[2]   LOCALIZED MAGNETIC STATES IN METALS [J].
ANDERSON, PW .
PHYSICAL REVIEW, 1961, 124 (01) :41-&
[3]   Optical properties and functions of dilute magnetic semiconductors [J].
Ando, K ;
Saito, H ;
Zayets, V ;
Debnath, MC .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2004, 16 (48) :S5541-S5548
[4]   Magneto-optical properties of ZnO-based diluted magnetic semiconductors [J].
Ando, K ;
Saito, H ;
Jin, ZW ;
Fukumura, T ;
Kawasaki, M ;
Matsumoto, Y ;
Koinuma, H .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (11) :7284-7286
[5]   Large magneto-optical effect in an oxide diluted magnetic semiconductor Zn1-xCoxO [J].
Ando, K ;
Saito, H ;
Jin, ZW ;
Fukumura, T ;
Kawasaki, M ;
Matsumoto, Y ;
Koinuma, H .
APPLIED PHYSICS LETTERS, 2001, 78 (18) :2700-2702
[6]   Two-center formulation of Mn2+-electron s-d exchange coupling in bulk and quantum-confined diluted magnetic semiconductors [J].
Beaulac, Remi ;
Gamelin, Daniel R. .
PHYSICAL REVIEW B, 2010, 82 (22)
[7]   Structural, electrical and optical characterization of Ti-doped ZnO films grown by atomic layer deposition [J].
Bergum, Kristin ;
Hansen, Per-Anders ;
Fjellvag, Helmer ;
Nilsen, Ola .
JOURNAL OF ALLOYS AND COMPOUNDS, 2014, 616 :618-624
[8]   INTERACTION BETWEEN BAND ELECTRONS AND TRANSITION-METAL IONS IN DILUTED MAGNETIC SEMICONDUCTORS [J].
BHATTACHARJEE, AK .
PHYSICAL REVIEW B, 1992, 46 (09) :5266-5273
[9]   KINETIC EXCHANGE IN DILUTED MAGNETIC SEMICONDUCTORS [J].
BLINOWSKI, J ;
KACMAN, P .
PHYSICAL REVIEW B, 1992, 46 (19) :12298-12304
[10]   Anchor Group versus Conjugation: Toward the Gap-State Engineering of Functionalized ZnO(10(1)over-bar0) Surface for Optoelectronic Applications [J].
Calzolari, Arrigo ;
Ruini, Alice ;
Catellani, Alessandra .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2011, 133 (15) :5893-5899