Laser Scribing for Facet Fabrication of InGaN MQW Diode Lasers on Sapphire Substrates

被引：22

作者：

van Look, Jan-Robert ^{[1
]}

Einfeldt, Sven ^{[2
]}

Krueger, Olaf ^{[2
]}

Hoffmann, Veit ^{[2
]}

Knauer, Arne ^{[2
]}

Weyers, Markus ^{[2
]}

Vogt, Patrick ^{[1
]}

Kneissl, Michael ^{[1
]}

机构：

[1] Tech Univ Berlin, Inst Festkorperphys, D-10623 Berlin, Germany

[2] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2010年 / 22卷 / 06期

关键词：

Cleaved facets; GaN; III-nitrides; InGaN; laser ablation; laser diodes; laser micromachining; laser scribing; materials processing; sapphire; semiconductor lasers; NITRIDE; TEMPERATURE;

D O I：

10.1109/LPT.2009.2039995

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a novel method for the fabrication of high-quality facets for III-nitride lasers grown on c-plane sapphire substrates as well as on GaN substrates is presented. Based on a laser scribing process gain-guided laser diodes with smooth facets were fabricated, which showed threshold current densities of 6.5 kA/cm(2) at an emission wavelength of 405 nm under pulsed operation.

引用

页码：416 / 418

页数：3

共 13 条

[1]

Böttcher T, 2002, PHYS STATUS SOLIDI A, V191, pR3, DOI 10.1002/1521-396X(200205)191:1<R3::AID-PSSA99993>3.0.CO

[2]

2-#

[3] Micromachining and dicing of sapphire, gallium nitride and micro LED devices with UV copper vapour laser [J].

Gu, E ;

Jeon, CW ;

Choi, HW ;

Rice, G ;

Dawson, MD ;

Illy, EK ;

Knowles, MRH .

THIN SOLID FILMS, 2004, 453 :462-466

[4] Influence of MOVPE growth temperature on the structural and optical properties of InGaN MQW laser diodes [J].

Hoffmann, V. ;

Knauer, A. ;

Brunner, F. ;

Netzel, C. ;

Zeimer, U. ;

Einfeldt, S. ;

Weyers, M. ;

Traenkle, G. ;

Karaliunas, J. M. ;

Kazlauskas, K. ;

Jursenas, S. ;

Jahn, U. ;

van Look, J. R. ;

Kneissl, M. .

JOURNAL OF CRYSTAL GROWTH, 2008, 310 (21) :4525-4530

[5] Impact of laser scribing for efficient device separation of LED components [J].

Illy, EK ;

Knowles, M ;

Gu, E ;

Dawson, MD .

APPLIED SURFACE SCIENCE, 2005, 249 (1-4) :354-361

[6] Room temperature pulsed operation of nitride based multi-quantum-well laser diodes with cleaved facets on conventional C-face sapphire substrates [J].

Itaya, K ;

Onomura, M ;

Nishio, J ;

Sugiura, L ;

Saito, S ;

Suzuki, M ;

Rennie, J ;

Nunoue, SY ;

Yamamoto, M ;

Fujimoto, H ;

Kokubun, Y ;

Ohba, Y ;

Hatakoshi, G ;

Ishikawa, M .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (10B) :L1315-L1317

[7] Dry-etching and characterization of mirrors on III-nitride laser diodes from chemically assisted ion beam etching [J].

Kneissl, M ;

Hofstetter, D ;

Bour, DP ;

Donaldson, R ;

Walker, J ;

Johnson, NM .

JOURNAL OF CRYSTAL GROWTH, 1998, 189 :846-849

[8] UV laser drilling of SiC for semiconductor device fabrication [J].

Krueger, Olaf ;

Schoene, Gerd ;

Wernicke, Tim ;

John, Wilfred ;

Wuerfl, Joachim ;

Traenkle, Guenther .

COLA'05: 8TH INTERNATIONAL CONFERENCE ON LASER ABLATION, 2007, 59 :740-+

[9] Laser-assisted processing of VIAs for AlGaN/GaN HEMTs on SiC substrates [J].

Krüger, O ;

Schöne, G ;

Lossy, R ;

Liero, A ;

Schnieder, F ;

Würfl, J ;

Tränkle, G .

IEEE ELECTRON DEVICE LETTERS, 2006, 27 (06) :425-427

[10]

Mendes M, 2006, SOLID STATE TECHNOL, V49, P42

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