A Brief Review of Plasma Enhanced Atomic Layer Deposition of Si3N4

Silicon nitride (SiNx) thin films have attracted interest as an important material for use in next-generation devices such as a gate spacer in 3D fin field-effect transistors (finFETs), charge trap layers, etc. Many studies using the SiNx plasma enhanced atomic layer deposition (PEALD) method have been conducted, owing to its advantages over other SiNx deposition methods. In this review, the recent studies on PEALD of SiNx thin films are summarized, and the effects of some process parameters including plasma power, frequency, and process temperature on the material properties of SiNx are discussed. In addition, some properties of SiNx thin films such as conformality, wet etch rate, and others are reviewed.