Advanced BCD technology for automotive, audio and power applications

被引:56
作者
Wessels, Piet
Swanenberg, Maarten
van Zwol, Hans
Krabbenborg, Benno
Boezen, Henk
Berkhout, Marco
Grakist, Alfred
机构
[1] NXP Semicond, Dept ICN, NL-6534 AE Nijmegen, Netherlands
[2] NXP Semicond, Dept Device Engn & Characterisat, NL-6534 AE Nijmegen, Netherlands
[3] NXP Semicond, Business Line Personal Entertainment Solut, NL-6534 AE Nijmegen, Netherlands
[4] NXP Semicond, Automat Business Line, NL-6534 AE Nijmegen, Netherlands
[5] NXP Semicond, Prod Line Power Solut, Business Line Power Management, NL-6534 AE Nijmegen, Netherlands
关键词
SOI; BCD; automotive CAN transceiver; LIN transceiver; class-D audio amplifier; electro luminescent driver;
D O I
10.1016/j.sse.2007.01.019
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
NXP's family of SOI-based advanced bipolar CMOS DMOS (A-BCD) technologies is presented. The technology is very successful in automotive, audio and power applications. This paper introduces the technology, the device concepts and the applications. The advantage of BCD technology on SOI is in the ability to have all devices fully dielectrically isolated. This enables various device-biasing conditions (like high side or below substrate voltage), which are not easy to realise on bulk. This creates competitive advantage in the mentioned applications. As an example this enables extreme robust EMC (electro magnetic compatibility) and EMI (electro magnetic immunity) circuitry for CAN (controlled area network), or LIN (local interconnect network) transceivers in automotive. The leakage currents of the devices are much lower compared to bulk. The same holds for parasitic capacitances towards the substrate. LIGBT's can be built without suffering from minority carriers being injected into the substrate. The area of power devices is in general very small due to the usage of the double Resurf principle and trench isolation. This small area pays off for high voltage analogue circuits. Special topics on self-heating and ESD are being treated, where it is demonstrated that performance is comparable to bulk. Three applications where SOI based BCD generates a functionality advantage, are being explained. The SOI based technology is an excellent starting point for development of future products were monolithic solutions can be built with embedded power or even embedded MEMs technology. (c) 2007 Elsevier Ltd. All rights reserved.
引用
收藏
页码:195 / 211
页数:17
相关论文
共 26 条
[1]  
[Anonymous], 2001, 6100042 IEC
[2]  
*ANSI ESD, 1997, STM521999
[3]  
*ANSI ESD, STMF12001 ANSI ESD
[4]  
*ANSIESD, 2000, STM531199
[5]  
Appels J. A., 1979, P IEDM, P238
[6]  
Berkhout M, 2004, ANALOG CIRCUIT DESIGN: SENSOR AND ACTUATOR INTERFACE ELECTRONICS, INTEGRATED HIGH-VOLTAGE ELECTRONICS AND POWER MANAGEMENT, LOW-POWER AND HIGH-RESOLUTION ADC'S, P153
[7]   Integrated overcurrent protection system for class-D audio power amplifiers [J].
Berkhout, M .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2005, 40 (11) :2237-2245
[8]  
Berkhout M, 2003, ISSCC DIG TECH PAP I, V46, P134
[9]   An integrated 200-W class-D audio amplifier [J].
Berkhout, M .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2003, 38 (07) :1198-1206
[10]   Smart power approaches VLSI complexity [J].
Contiero, C ;
Galbiati, P ;
Palmieri, M ;
Ricotti, G ;
Stella, R .
ISPSD '98 - PROCEEDINGS OF THE 10TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS, 1998, :11-16