High-extraction-efficiency blue light-emitting diode using extended-pitch photonic crystal

被引：69

作者：

Orita, K ^{[1
]}

Tamura, S ^{[1
]}

Takizawa, T ^{[1
]}

Ueda, T ^{[1
]}

Yuri, M ^{[1
]}

Takigawa, S ^{[1
]}

Ueda, D ^{[1
]}

机构：

[1] Matsushita Elect Ind Co Ltd, Semicond Co, Semicond Device Res Ctr, Osaka 5691193, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 2004年 / 43卷 / 8B期

关键词：

photonic crystal; GaN; LED; extraction efficiency; finite-difference time-domain method;

D O I：

10.1143/JJAP.43.5809

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have integrated the surface photonic crystal (PhC) on GaN-based blue light-emitting diodes (LEDs) for the first time in order to enhance the extraction efficiency of the LEDs. With the finite-difference time-domain method, we have calculated 3.6-fold enhancement in light output. The theoretical calculations have revealed that the optimum pitch of the PhC is much longer than the emission wavelength when the distance between the PhC and the active layer of LEDs is short. This design enables PhC formation on chemically stable GaN surfaces. In addition, an indium tin oxide (ITO)-based transparent electrode is formed directly on the surface of PhC to realize light emission from the whole area of the LED. The fabricated PhCs have increased the light output of blue LEDs by 1.5 times compared with the LEDs without PhC. We have demonstrated that PhC will realize highly efficient solid-state lighting with GaN-based LEDs.

引用

页码：5809 / 5813

页数：5

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