Effects of nitrogen plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal InN films grown on Si (111) by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy

被引：2

作者：

Yodo, Tokuo ^{[1
]}

Shimada, Teruya ^{[1
]}

Tagawa, Sumito ^{[1
]}

Harada, Yoshiyuki ^{[1
]}

机构：

[1] Osaka Inst Technol, Omiya, Osaka 5358585, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 301卷 / 504-507期

关键词：

hetero-interface; photoluminescence; molecular beam epitaxy; semiconducting indium nitride; semiconducting silicon;

D O I：

10.1016/j.jcrysgro.2006.12.002

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report the effects of nitrogen (N) plasma irradiation during the growth process after buffer layer growth on the characteristics of hexagonal (alpha) InN films grown on Si(1 1 1) substrates by electron-cyclotron resonance plasma-assisted molecular-beam epitaxy. (0 0 0 1)oriented single-crystalline alpha-InN films were dominantly grown independently of N plasma irradiation during the process. However, the crystalline qualities were greatly improved by irradiation in the high-growth-temperature region, effectively suppressing re-evaporation of N atoms from InN. Moreover, the n-type carrier concentrations of the N plasma-irradiated samples decreased to about 10(18)-10(19) cm(-3), one to two orders lower than those without irradiation. A strong infra-red PL emission of 0.75 eV was observed on the whole surface between 4 and 300 K, only from samples grown under weak N plasma conditions and irradiated by N plasma during the process. The origin of the residual donor impurities was determined to be related to N vacancy. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：504 / 507

页数：4

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