A Millimeter-Wave Field-Effect Transistor Based on a Pseudomorphic Heterostructure with an Additional Potential Barrier

被引：0

作者：

Bogdanov, S. A. ^{[1
]}

Bakarov, A. K. ^{[2
]}

Zhuravlev, K. S. ^{[2
]}

Lapin, V. G. ^{[1
]}

Lukashin, V. M. ^{[1
]}

Pashkovskii, A. B. ^{[1
]}

Rogachev, I. A. ^{[1
]}

Tereshkin, E. V. ^{[1
]}

Shcherbakov, S. V. ^{[1
]}

机构：

[1] AO Shokin NPP Istok, Fryazino 141190, Moscow Oblast, Russia

[2] Russian Acad Sci, Rzhanov Inst Semicond Phys, Siberian Branch, Novosibirsk 630090, Russia

来源：

TECHNICAL PHYSICS LETTERS | 2021年 / 47卷 / 04期

关键词：

additional potential barriers; field-effect transistor; gain; ELECTRON-DRIFT VELOCITY; POWER; GAN; TRANSPORT;

D O I：

10.1134/S1063785021040052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report on the results of investigations of the millimeter-wave field-effect transistors with a 0.14-mu m T-shaped gate with pseudomorphic Al0.3Ga0.7As-In0.22Ga0.78As-Al0.3Ga0.7As heterostructures with additional potential barriers based on a two-sided donor-acceptor channel doping. At a frequency of 40 GHz in a wide gate voltage range, the maximum stable gain of more than 15 dB has been obtained. The maximum oscillation frequency of the device is about 250 GHz, the open-channel specific current density is about 0.7 A/mm, and the gate-drain breakdown voltage is 22-31 V for different versions.

引用

页码：329 / 332

页数：4

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