Effect of annealing on structural, electrical and optical properties of p-quaterphenyl thin films

被引：7

作者：

Darwish, A. A. A. ^{[1
,2
]}

机构：

[1] Sanaa Univ, Fac Educ Al Mahweet, Dept Phys, Al Mahweet, Yemen

[2] Tabuk Univ, Fac Sci, Dept Phys, Tabuk, Saudi Arabia

来源：

INFRARED PHYSICS & TECHNOLOGY | 2017年 / 82卷

关键词：

Organic compounds; Thin films; Optical properties; Electrical properties; NANOSTRUCTURE FILMS; SOLAR-CELLS; ELECTROLUMINESCENCE; OLIGOMERS; GROWTH; BULK; SE;

D O I：

10.1016/j.infrared.2017.03.004

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Thin films of p-quaterphenyl are deposited by an evaporation technique. IR spectra confirm that the thermal evaporation method is a decent one to acquire p-quaterphenyl films without dissociation. The X-ray diffraction studies demonstrate that the as-deposited and annealed films are polycrystalline with monoclinic structure. The electrical conductivity shows an activated behavior and indicating that p-quaterphenyl behaves as an organic semiconductor. The value of activation energy decreases by annealing, which explains due to the adjustment in the crystallite size. Optical properties of p-quaterphenyl films were performed to determine some optical constants. Dispersion of the refractive index is described utilizing the Wemple-DiDomenico model. In addition, the third order nonlinear susceptibility and the nonlinear refractive index are calculated. The analysis of the absorption coefficient for the as-deposited film showed an allowed direct optical band gap with a value of 2.35 eV, which decreased by annealing to 2.05 eV. (C) 2017 Elsevier B.V. All rights reserved.

引用

页码：96 / 100

页数：5

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