Temperature dependence of visible photoluminescence from PECVD nanocrystallites embedded in amorphous silicon films

被引：5

作者：

Tong, S ^{[1
]}

Liu, XN ^{[1
]}

Gao, T ^{[1
]}

Bao, XM ^{[1
]}

Chang, Y ^{[1
]}

Shen, WZ ^{[1
]}

Tang, WG ^{[1
]}

机构：

[1] ACAD SINICA, SHANGHAI INST TECH PHYS, SHANGHAI 200083, PEOPLES R CHINA

来源：

SOLID STATE COMMUNICATIONS | 1997年 / 104卷 / 10期

关键词：

nanostructures; semiconductor; recombination and trapping; luminescence;

D O I：

10.1016/S0038-1098(97)00391-8

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The temperature dependence of visible range photoluminescence (PL) properties of nanocrystallites embedded in silicon films deposited at the substrate temperature T-s= 50-150 degrees C by PECVD method was studied. It was found that there are many differences between them and that of the near-infrared range PL in ordinary a-Si:H films. Combining with the results of photo-absorption studies of these nanocrystalline samples, we discussed the mechanism of their visible range FL. We suggest that the light excitation occurs in both the nanocrystallites core and their surface regions; however, the radiative recombination can only occur between the electrons and holes in the localized band tail states of the crystallite surface regions, which are more disordered than ordinary a-Si:H with their defect states extending more deeply into the band gap. (C) 1997 Elsevier Science Ltd.

引用

页码：603 / 607

页数：5

共 50 条

[1] Temperature dependence of visible photoluminescence from PECVDnanocrystallites embedded in amorphous silicon films
Natl. Lab. Solid Stt. M., Department of Physics, Nanjing University, Nanjing, 210093, China
不详
Solid State Commun, 10 (603-607):
[2] Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix
Coscia, U.
Ambrosone, G.
Basa, D. K.
JOURNAL OF APPLIED PHYSICS, 2008, 103 (06)
[3] Room temperature visible photoluminescence of silicon nanocrystallites embedded in amorphous silicon carbide matrix
Coscia, U.
Ambrosone, G.
Basa, D.K.
Journal of Applied Physics, 2008, 103 (06):
[4] Photoluminescence of nanocrystallites embedded in hydrogenated amorphous silicon films
Liu, Xiang-Na
Tong, Song
Wang, Lu-Chun
Chen, Guang-Xu
Bao, Xi-Mao
Journal of Applied Physics, 1995, 78 (10):
[5] PHOTOLUMINESCENCE OF NANOCRYSTALLITES EMBEDDED IN HYDROGENATED AMORPHOUS-SILICON FILMS
LIU, XN
TONG, S
WANG, LC
CHEN, GX
BAO, XM
JOURNAL OF APPLIED PHYSICS, 1995, 78 (10) : 6193 - 6196
[6] Photoluminescence of the nanocrystallites embedded in silicon oxide films
Miu, M
Kleps, I
Angelescu, A
Simion, M
Bragaru, A
CAS: 2002 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 2001, : 139 - 142
[7] Growth and characterization of silicon nanocrystallites embedded in amorphous silicon carbon matrix by PECVD
Coscia, U.
Ambrosone, G.
Basa, D. K.
Rigato, V.
Ballarini, M.
Virga, A.
Ferrero, S.
Mercaldo, L. V.
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11, 2012, 9 (10-11): : 1869 - 1872
[8] Visible photoluminescence of Ge nanocrystallites embedded in SiO2 thin films
Yue, LP
He, YH
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1997, 15 (05): : 1607 - 1609
[9] Mechanism of visible photoluminescence from oxidized silicon and germanium nanocrystallites
Kanemitsu, Y
THIN SOLID FILMS, 1996, 276 (1-2) : 44 - 46
[10] High-efficiency visible photoluminescence from amorphous silicon nanoparticles embedded in silicon nitride
Wang, YQ
Wang, YG
Cao, L
Cao, ZX
APPLIED PHYSICS LETTERS, 2003, 83 (17) : 3474 - 3476

← 1 2 3 4 5 →